Dependence of RF power on the phase transformation for boron nitride films deposited on graphite at room temperature

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3716-3720

  Yang, Xuxin ^a   Li, Hongdong ^a   Li, Yingai ^a   Lü, Xianyi ^a   Gao, Shiyong ^a   Zhu, Pinwen ^a   Zhang, Qing ^a   Zhang, Tiechen ^a   Zou, Guangtian ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

A1. Crystal structure; A3. Physical vapor deposition processes; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A1. CRYSTAL STRUCTURE; A3. PHYSICAL VAPOR DEPOSITION PROCESSES; APPLIED FIELD; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; BN FILMS; BORON NITRIDE FILMS; CUBIC BORON NITRIDE (CBN); CUBIC PHASE; ELECTRON FIELD EMISSION; GRAPHITE SUBSTRATE; GROWTH PROCESS; HIGH EMISSION CURRENT DENSITY; OPTICAL TRANSMISSION MEASUREMENTS; PHASE TRANSFORMATION; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-POWER; ROOM TEMPERATURE; SUBSTRATE HEATING; TRANSFORMATION MECHANISMS; ZERO BIAS;

BORON; CARBON NANOTUBES; CRYSTAL STRUCTURE; CUBIC BORON NITRIDE; FIELD EMISSION; FILM GROWTH; GRAPHITE; MAGNETRON SPUTTERING; SEMICONDUCTOR GROWTH; SUBSTRATES; THICK FILMS; VAPORS;

BORON NITRIDE;

EID: 67649886408     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.041     Document Type: Article

References (30)

1. Mirkarimi P.B., McCarty K.F., and Medlin D.L. Mater. Sci. Eng. R 21 (1997) 47
2. Samantaray C.B., and Singh R.N. Int. Mater. Rev. 50 (2005) 313
3. Pokropivny A.V. Diamond Relat. Mater. 15 (2006) 1492
4. Zhang W.J., Bello I., Lifshitz Y., Chan K.M., Wu Y., Chan C.Y., Meng X.M., and Lee S.T. Adv. Mater. 16 (2004) 1405
5. Zhang X.W., Boyen H.G., Deyneka N., Ziemann P., Banhart F., and Schreck M. Nat. Mater 2 (2003) 312
6. Klotzbucher T., Pfleging W., Wesner D.A., Mergens M., and Kreutz E.W. Diamond Relat. Mater. 5 (1996) 525
7. Hofsäss H., Eyhusen S., and Ronning C. Diamond Relat. Mater. 13 (2004) 1103
8. Novoselov K.S., Geim A.K., and Morozov S.V. Science 306 (2004) 666
9. Zhang X.W., Boyen H.G., Yina H., Ziemann P., and Banhart F. Diamond Relat. Mater. 14 (2005) 1474
10. Park K.S., Lee D.Y., Kim K.J., and Moon D.W. Appl. Phys. Lett. 70 (1997) 315
11. Widmayer P., Boyen H.G., Ziemann P., Reinke P., and Oelhafen P. Phys. Rev. B. 59 (1999) 5233
12. Qlszyna A., Hrabowska K., and Lisicki M. Diamond Relat. Mater. 6 (1997) 617
13. Batzanov S.S., Blochin G.E., and Deribas A.A. J. Struct. Chem. 7 (1965) 209
14. Guo J., Wang H., Zhu J.S., Zheng K., Zhu M.K., Yan H., and Yoshimura M. Electrochem. Commun. 9 (2007) 1824
15. Guerini S., Miwa R.H., Schmidt T.M., and Piquini P. Diamond Relat. Mater. 17 (2008) 1963
16. Li Z.D., Wang L., Suzuki T., Argoitia A., Pirouz P., and Angus J.C. J. Appl. Phys. 73 (1993) 711
17. Kelly K.F., Sarkar D., Hale G.D., Oldenburg S.J., and Halas N.J. Science 273 (1996) 137
18. Hahn R., and Kang K. Phys. Rev. B 60 (1999) 6007
19. Leung K.M., Chan C.Y., Chong Y.M., Yao Y., Ma K.L., Bello I., Zhang W.J., and Lee S.T. J. Phys. Chem. B 109 (2005) 16272
20. Zang X.W., Zou Y.J., Wang B., Song X.M., Yan H., Chen G.H., and Wong S.P. J. Mater. Sci. 36 (2001) 1957
21. Tan S.T., Chen B.J., Sun X.W., Fan W.J., Kwok H.S., Zhang X.H., and Chua S.J. J. Appl. Phys. 98 (2005) 013505
22. Tsunekawa S., Fukuda T., and Kasuya A. J. Appl. Phys. 87 (2000) 31
23. Tauc J. Amorphous and Liquid Semiconductors (1974), Plenum Press, London
24. David E.A., and Mott N.F. Philos. Mag. 22 (1970) 903
25. Chen G.H., Zhang X.W., Wang B., Song X.M., Cui B.T., and Yan H. Appl. Phys. Lett. 75 (1999) 10
26. Wang R.Z., Zhou H., Song X.M., Wang B., Wang H., and Yan H. J. Crystal Growth. 291 (2006) 18
27. Powers M.J., Benjamin M.C., Porter L.M., Nemanich R.J., Davis R.F., Cuomo J.J., Doll G.L., and Harris S.J. Appl. Phys. Lett. 67 (1995) 3912
28. Teii K., Matsumoto S., and Robertson J. Appl. Phys. Lett. 92 (2008) 013115
29. Geis M.W., Twichell J.C., and Lyszczarz T.M. J. Vac. Sci. Technol. B 14 (1996) 2060
30. Xu N.S., Tzeng Y., and Latham R.V. J. Phys. D 26 (1993) 1776