Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry

Vacuum

Volumn 50, Issue 3-4, 1998, Pages 293-297

  Petrik, P ^a   Polgar O ^a   Lohner, T ^a   Fried, M ^a   Khanh N Q ^a   Gyulai, J ^a  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELLIPSOMETRY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

BURIED DISORDER; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0032108877     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00056-6     Document Type: Article

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