메뉴 건너뛰기




Volumn 93, Issue 9, 2009, Pages 1618-1623

8 MeV electron irradiation studies on electrical characteristics of Cu(In,Ga)Se2 solar cells

Author keywords

Capacitance frequency; CIGS; Current voltage characteristics; Efficiency; Electron irradiation; Ideality factor; Series resistance; Solar cell

Indexed keywords

BAND GAPS; BEFORE AND AFTER; CIGS; CU(IN , GA)SE; CURRENT CONDUCTION MECHANISMS; DEPLETION REGION; EFFECT OF TEMPERATURE; ELECTRICAL CHARACTERISTIC; ELECTRON DOSE; FILL FACTOR; GENERATION-RECOMBINATION; HIGH CONVERSION EFFICIENCY; IDEALITY FACTOR; IDEALITY FACTORS; ILLUMINATION CONDITIONS; IV CHARACTERISTICS; MINORITY CARRIER; OPTICAL ABSORPTION COEFFICIENTS; POLYCRYSTALLINE; REVERSE BIAS; SATURATION CURRENT; SERIES RESISTANCE; SOLAR CELL PARAMETERS; SPACE POWER SYSTEMS; TEMPERATURE RANGE; THIN-FILM SOLAR CELLS;

EID: 67649589213     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.04.021     Document Type: Article
Times cited : (6)

References (24)
  • 5
  • 6
    • 0033878880 scopus 로고    scopus 로고
    • Future of photovoltaics for space applications
    • Iles P. Future of photovoltaics for space applications. Prog. Photovoltaics: Res. Appl. 8 (2000) 39-51
    • (2000) Prog. Photovoltaics: Res. Appl. , vol.8 , pp. 39-51
    • Iles, P.1
  • 8
    • 0035878681 scopus 로고    scopus 로고
    • 2 heterojunction solar cells by high-energy electron and proton irradiation
    • 2 heterojunction solar cells by high-energy electron and proton irradiation. J. Appl. Phys. 90 (2001) 650-658
    • (2001) J. Appl. Phys. , vol.90 , pp. 650-658
    • Jasenek, A.1    Rau, U.2
  • 18
    • 0345673998 scopus 로고
    • 2 on the electronic properties of molecular-beam epitaxially grown CdTe/CdS heterojunction solar cells
    • 2 on the electronic properties of molecular-beam epitaxially grown CdTe/CdS heterojunction solar cells. J. Appl. Phys. 70 (1991) 881-890
    • (1991) J. Appl. Phys. , vol.70 , pp. 881-890
    • Ringe, A.1    Smith, A.W.2    MacDougal, M.H.3    Rohatgi, A.4
  • 19
    • 25144489039 scopus 로고    scopus 로고
    • Mechanism of carrier transport across the junction of narrow band-gap planar n+p HgCdTe photodiodes grown by liquid-phase epitaxy
    • Zemel A., Lukomsky I., and Weiss E. Mechanism of carrier transport across the junction of narrow band-gap planar n+p HgCdTe photodiodes grown by liquid-phase epitaxy. J. Appl. Phys. 98 (2005) 054504-054507
    • (2005) J. Appl. Phys. , vol.98 , pp. 054504-054507
    • Zemel, A.1    Lukomsky, I.2    Weiss, E.3
  • 20
    • 0031144671 scopus 로고    scopus 로고
    • Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices
    • Bayhen H., and Ercelebi C. Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices. Semicond. Sci. Technol. 12 (1997) 600-604
    • (1997) Semicond. Sci. Technol. , vol.12 , pp. 600-604
    • Bayhen, H.1    Ercelebi, C.2
  • 22
    • 0042267251 scopus 로고    scopus 로고
    • Activation energy analysis as a tool for extraction and investigation of p-n junction leakage current components
    • Czerwinski A., Simoen E., Povai A., and Claeys C. Activation energy analysis as a tool for extraction and investigation of p-n junction leakage current components. J. Appl. Phys. 94 (2003) 1218-1221
    • (2003) J. Appl. Phys. , vol.94 , pp. 1218-1221
    • Czerwinski, A.1    Simoen, E.2    Povai, A.3    Claeys, C.4
  • 23
    • 0036475348 scopus 로고    scopus 로고
    • The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si Schottky barrier diodes
    • Ayyildiz E., Nuho L.C., and Turut A. The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si Schottky barrier diodes. J. Electron. Mater. 31 (2002) 119-123
    • (2002) J. Electron. Mater. , vol.31 , pp. 119-123
    • Ayyildiz, E.1    Nuho, L.C.2    Turut, A.3
  • 24
    • 0022028576 scopus 로고
    • 2 surface preparation
    • 2 surface preparation. Solid State Electron. 28 (1985) 223-232
    • (1985) Solid State Electron. , vol.28 , pp. 223-232
    • Singh, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.