Modification of power diode characteristics using bremsstrahlung radiation from microtron

Radiation Physics and Chemistry

Volumn 55, Issue 4, 1999, Pages 461-464

  Ganesh, ^c   Prashanth, K C ^c   Nagesha, Y N ^c   Gnana Prakash, A P ^c   Umakanth, D ^c   Pattabi, Manjunatha ^a   Siddappa, K ^c   Salkalachen, Saji ^b   Roy, Amitav ^b  

^a MANGALORE UNIVERSITY   (India)

^b BHARAT HEAVY ELECTRICALS LIMITED   (India)

^c NONE

Author keywords

Bremsstrahlung; Irradiation; Microtron; Power diode characteristics

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; DOSIMETRY; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; MICROTRONS; PHOTONS; RADIATION DAMAGE; SEMICONDUCTING SILICON;

BREMSSTRAHLUNG;

SEMICONDUCTOR DIODES;

SILICON;

ARTICLE; BREMS RADIATION; CRYSTAL STRUCTURE; DIODE; ELECTRIC POTENTIAL; ELECTRICAL PARAMETERS; ELECTRON; IRRADIATION; PHOTON; RADIATION DOSE; SEMICONDUCTOR; STRUCTURE ACTIVITY RELATION;

EID: 0032803403     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(99)00268-6     Document Type: Article

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