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Volumn 44, Issue 14, 2009, Pages 3877-3882

A single phase semiconducting Ca-silicide film growth by sputtering conditions, annealing temperature and annealing time

(2) Yinye, Yang a Quan, Xie a

a GUIZHOU UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ANNEALING TIME; CUBIC PHASE; ENERGY DISPERSIVE ANALYSIS OF X-RAYS; MAGNETRON SPUTTERING SYSTEMS; MORPHOLOGICAL FEATURES; ORTHORHOMBIC PHASE; RADIO FREQUENCIES; SELECTIVE GROWTH; SEM; SI (100) SUBSTRATE; SI FILMS; SILICIDE FILMS; SINGLE PHASE; SPUTTERING CONDITIONS; SPUTTERING POWER; TETRAGONAL PHASE;

ANNEALING; CALCIUM; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICIDES; SILICON; SUBSTRATES; VACUUM FURNACES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

FILM GROWTH;

EID: 67649400369 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-009-3529-1 Document Type: Article

Times cited : (14)

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