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Volumn E89-C, Issue 7, 2006, Pages 874-882

Future of heterostructure microelectronics and roles of materials research for its progress

Author keywords

Heterostructure; High speed devices; III V semiconductors; Nanotechnology; Sensors; Smart chips

Indexed keywords

BIOTECHNOLOGY; ENGINEERING RESEARCH; HETEROJUNCTIONS; LSI CIRCUITS; MATERIALS SCIENCE; MICROPROCESSOR CHIPS; NANOTECHNOLOGY; QUANTUM THEORY; SENSORS;

EID: 33747873709     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.874     Document Type: Conference Paper
Times cited : (3)

References (54)
  • 1
    • 33747894489 scopus 로고    scopus 로고
    • Special section on new system paradigms for integrated electronics
    • Nov.
    • See for example, Special Section on New System Paradigms for Integrated Electronics, IEICE Trans. Electron., vol.E87-C, no.11, Nov. 2004.
    • (2004) IEICE Trans. Electron. , vol.E87-C , Issue.11
  • 2
    • 0032631590 scopus 로고    scopus 로고
    • Molecular beam epitaxy and device applications of III-V semiconductor nanowires
    • H. Hasegawa, H. Fujikura, and H. Okada, "Molecular beam epitaxy and device applications of III-V semiconductor nanowires," MRS Bulletin, vol.24, pp.25-30, 1999.
    • (1999) MRS Bulletin , vol.24 , pp. 25-30
    • Hasegawa, H.1    Fujikura, H.2    Okada, H.3
  • 3
    • 0030677164 scopus 로고    scopus 로고
    • Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy
    • K. Kumakura, J. Motohisa, and T. Fukui, "Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy," J. Crys. Growth, vol.170, pp.700-704, 1997.
    • (1997) J. Crys. Growth , vol.170 , pp. 700-704
    • Kumakura, K.1    Motohisa, J.2    Fukui, T.3
  • 4
    • 3342899305 scopus 로고    scopus 로고
    • Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy
    • T. Sato, I. Tamai, S. Yoshida, and H. Hasegawa, "Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy," Appl. Surf. Sci., vol.234, pp. 11-15, 2004.
    • (2004) Appl. Surf. Sci. , vol.234 , pp. 11-15
    • Sato, T.1    Tamai, I.2    Yoshida, S.3    Hasegawa, H.4
  • 5
    • 30744433779 scopus 로고    scopus 로고
    • Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates
    • T. Sato, I. Tamai, and H. Hasegawa, "Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates," J. Vac. Sci. Technol. B, vol.23, pp.1706-1713, 2005.
    • (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 1706-1713
    • Sato, T.1    Tamai, I.2    Hasegawa, H.3
  • 6
    • 0043014812 scopus 로고    scopus 로고
    • Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
    • P. Mohan, F. Nakajima, M. Akabori, J. Motohisa, and T. Fukui, "Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol.83, pp.689-691, 2003.
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 689-691
    • Mohan, P.1    Nakajima, F.2    Akabori, M.3    Motohisa, J.4    Fukui, T.5
  • 7
    • 24644510420 scopus 로고    scopus 로고
    • Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
    • J. Noborisaka, J. Motohisa, S. Hara, and T. Fukui, "Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol.87, p.093109, 2005.
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 093109
    • Noborisaka, J.1    Motohisa, J.2    Hara, S.3    Fukui, T.4
  • 8
    • 0037042053 scopus 로고    scopus 로고
    • Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy
    • A. Ito, T. Muranaka, C. Jiang, and H. Hasegawa, "Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy," Appl. Surf. Sci., vol.190, pp.231-235, 2002.
    • (2002) Appl. Surf. Sci. , vol.190 , pp. 231-235
    • Ito, A.1    Muranaka, T.2    Jiang, C.3    Hasegawa, H.4
  • 9
    • 0038233833 scopus 로고    scopus 로고
    • "Nanotechnology goals and challenges for electronic applications
    • M.T. Bohr, "Nanotechnology goals and challenges for electronic applications," IEEE Trans. Nanotech., vol.1, pp.56-62, 2002. Also see, http://www.intel.com/research/silicon/mooreslaw.htm http://www.intel.com/ research/silicon/mooreslaw.htm
    • (2002) IEEE Trans. Nanotech. , vol.1 , pp. 56-62
    • Bohr, M.T.1
  • 10
    • 85027112981 scopus 로고    scopus 로고
    • RF and A/MS technologies for wireless communications
    • web site
    • ITRS road map 2003 edition, "RF and A/MS technologies for wireless communications," in web site, http://public.itrs.net/Files/2003ITRS/ Home2003.htm
    • ITRS Road Map 2003 Edition
  • 11
    • 33747872766 scopus 로고    scopus 로고
    • Future prospect of GaN HEMT devices for wireless communication systems
    • S. Seki, "Future prospect of GaN HEMT devices for wireless communication systems," FED Rev., vol.4, pp.1-14, 2003.
    • (2003) FED Rev. , vol.4 , pp. 1-14
    • Seki, S.1
  • 12
    • 0035982804 scopus 로고    scopus 로고
    • Mechanism of anomalous current transport in n-type GaN Schottky contacts
    • H. Hasegawa and S. Oyama, "Mechanism of anomalous current transport in n-type GaN Schottky contacts," J. Vac. Sci. Technol. B, vol.20, pp. 1647-1655, 2002.
    • (2002) J. Vac. Sci. Technol. B , vol.20 , pp. 1647-1655
    • Hasegawa, H.1    Oyama, S.2
  • 13
    • 4944243010 scopus 로고    scopus 로고
    • Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model
    • J. Kotani, T. Hashizume, and H. Hasegawa, "Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model," J. Vac. Sci. Technol. B, vol.22, pp.2179-2189, 2004.
    • (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 2179-2189
    • Kotani, J.1    Hashizume, T.2    Hasegawa, H.3
  • 14
    • 28844454233 scopus 로고    scopus 로고
    • Tunneling injection of electrons at nanometer-scale Schottky gate edge of AlGaN/GaN heterostructure transistors and its computer simulation
    • Saitama, Japan, Nov.
    • J. Kotani, S. Kasai, T. Hashizume, and H. Hasegawa, "Tunneling injection of electrons at nanometer-scale Schottky gate edge of AlGaN/GaN heterostructure transistors and its computer simulation," 2005 International Symposium on Surface Science and Nanotechnology (ISSS-4), Saitama, Japan, P2-87, Nov. 2005.
    • (2005) 2005 International Symposium on Surface Science and Nanotechnology (ISSS-4)
    • Kotani, J.1    Kasai, S.2    Hashizume, T.3    Hasegawa, H.4
  • 15
    • 31144453767 scopus 로고    scopus 로고
    • Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN heterostructure transistors
    • J. Kotani, S. Kasai, T. Hashizume, and H. Hasegawa, "Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN heterostructure transistors," J. Vac. Sci. Technol. B, vol.23, pp.1799-1807, 2005.
    • (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 1799-1807
    • Kotani, J.1    Kasai, S.2    Hashizume, T.3    Hasegawa, H.4
  • 16
    • 0010448184 scopus 로고    scopus 로고
    • InP-based high-electron-mobility transistors (HEMTs)
    • T. Suemitsu, "InP-based high-electron-mobility transistors (HEMTs)," Oyo Butsuri, vol.69, pp.141-151, 2000.
    • (2000) Oyo Butsuri , vol.69 , pp. 141-151
    • Suemitsu, T.1
  • 21
    • 0242664189 scopus 로고    scopus 로고
    • Advanced RF characterization and delay-time analysis of short channel AlGaN/GaN heterojunction FETs
    • T. Inoue, Y. Ando, K. Kasahara, Y. Okamoto, T. Nakayama, H. Miyamoto, and M. Kuzuhara, "Advanced RF characterization and delay-time analysis of short channel AlGaN/GaN heterojunction FETs," IEICE Trans. Electron., vol.E86-C, no.10, pp.2065-2070, 2003.
    • (2003) IEICE Trans. Electron. , vol.E86-C , Issue.10 , pp. 2065-2070
    • Inoue, T.1    Ando, Y.2    Kasahara, K.3    Okamoto, Y.4    Nakayama, T.5    Miyamoto, H.6    Kuzuhara, M.7
  • 23
    • 15044365864 scopus 로고    scopus 로고
    • Velocity overshoot effects and scaling issues in III-V nitrides
    • M. Singh, Y.-R. Wu, and J. Singh, "Velocity overshoot effects and scaling issues in III-V nitrides," IEEE Trans. Electron Devices, vol.52, pp.311-316, 2005.
    • (2005) IEEE Trans. Electron Devices , vol.52 , pp. 311-316
    • Singh, M.1    Wu, Y.-R.2    Singh, J.3
  • 24
    • 33747875835 scopus 로고    scopus 로고
    • Prospects of device technologies towards terahertz oscillation
    • E. Sano, "Prospects of device technologies towards terahertz oscillation," IEICE Trans. Electron. (Japanese Edition), vol.J87-C, no.5, pp.413-423, 2004.
    • (2004) IEICE Trans. Electron. (Japanese Edition) , vol.J87-C , Issue.5 , pp. 413-423
    • Sano, E.1
  • 26
    • 10444237207 scopus 로고    scopus 로고
    • Millimeter and submillimeter oscillators using resonant tunneling diodes with stacked-layer slot antennas
    • N. Orihashi, S. Hattori, and M. Asada, "Millimeter and submillimeter oscillators using resonant tunneling diodes with stacked-layer slot antennas," Jpn. J. Appl. Phys., vol.43, pp.L1309-L1311, 2004.
    • (2004) Jpn. J. Appl. Phys. , vol.43
    • Orihashi, N.1    Hattori, S.2    Asada, M.3
  • 27
    • 0030110405 scopus 로고    scopus 로고
    • Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid
    • M. Dyakonov and M. Shur, "Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid," IEEE Trans. Electron Devices, vol.43, pp.380-387, 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 380-387
    • Dyakonov, M.1    Shur, M.2
  • 28
    • 0034172638 scopus 로고    scopus 로고
    • Terahertz sources and detectors using two-dimensional electronic fluid in high electron-mobility transistors
    • M. Shur and J.-Q. Lu, "Terahertz sources and detectors using two-dimensional electronic fluid in high electron-mobility transistors," IEEE Trans. Microw. Theory Tech., vol.48, pp.750-756, 2000.
    • (2000) IEEE Trans. Microw. Theory Tech. , vol.48 , pp. 750-756
    • Shur, M.1    Lu, J.-Q.2
  • 29
    • 3242702244 scopus 로고    scopus 로고
    • Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves
    • A.M. Hashim, T. Hashizume, K. Iizuka, and H. Hasegawa, "Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves," Superlattices Micro-structures, vol.34, pp.531-537, 2003.
    • (2003) Superlattices Micro-structures , vol.34 , pp. 531-537
    • Hashim, A.M.1    Hashizume, T.2    Iizuka, K.3    Hasegawa, H.4
  • 30
    • 21244504214 scopus 로고    scopus 로고
    • Large modulation of conductance in interdigital-gated HEMT devices due to surface plasma wave interactions
    • A.M. Hashim, S. Kasai, T. Hashizume, and H. Hasegawa, "Large modulation of conductance in interdigital-gated HEMT devices due to surface plasma wave interactions," Jpn. J. Appl. Phys., vol.44, pp.2729-2734, 2005.
    • (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 2729-2734
    • Hashim, A.M.1    Kasai, S.2    Hashizume, T.3    Hasegawa, H.4
  • 31
    • 85027141882 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors, Emerging Research Devices, http://www.itrs.net/Common/2004Update/2004Update.htm
  • 34
    • 85027149511 scopus 로고    scopus 로고
    • International Technology Roadmap for Semi-conductors: http://public.itrs.net/
  • 38
    • 33747875604 scopus 로고    scopus 로고
    • Sensing mechanism of InP hydrogen sensors using Pt Schottky diodes formed by electrochemical process
    • Kobe, Japan, Extended Abstract, Sept.
    • T. Kimura, H. Hasegawa, T. Sato, and T. Hashizume, "Sensing mechanism of InP hydrogen sensors using Pt Schottky diodes formed by electrochemical process," 2005 Int. Conf. Solid-State Devices and Materials (SSDM), Kobe, Japan, Extended Abstract, pp.218-219, Sept. 2005.
    • (2005) 2005 Int. Conf. Solid-State Devices and Materials (SSDM) , pp. 218-219
    • Kimura, T.1    Hasegawa, H.2    Sato, T.3    Hashizume, T.4
  • 40
    • 0036138351 scopus 로고    scopus 로고
    • How organic molecules can control electronic devices
    • A. Vilan and D. Cahen, "How organic molecules can control electronic devices," Trends Biotechnology, vol.20, pp.22-29, 2002.
    • (2002) Trends Biotechnology , vol.20 , pp. 22-29
    • Vilan, A.1    Cahen, D.2
  • 41
    • 0142155097 scopus 로고    scopus 로고
    • The μ-chip: An ultra-small 2.45 GHz RFID chip for ubiquitous recognition application
    • M. Usami and M. Ohki, "The μ-chip: An ultra-small 2.45 GHz RFID chip for ubiquitous recognition application," IEICE Trans. Electron., vol.E86-C, no.4, pp.521-528, 2003.
    • (2003) IEICE Trans. Electron. , vol.E86-C , Issue.4 , pp. 521-528
    • Usami, M.1    Ohki, M.2
  • 42
    • 85027097967 scopus 로고    scopus 로고
    • See web site, http://www-bsac.eecs.berkeley.edu/archive/users/warneke- brett/SmartDust/
  • 43
    • 85027102069 scopus 로고    scopus 로고
    • Intel web site, http://www.intel.co.jp/research/exploratory/ wireless_sensors.htm
  • 44
    • 85027127139 scopus 로고    scopus 로고
    • IQ chip in 21st Century COE project of Hokkaido Univ.: http://www.rciqe.hokudai.ac.jp
  • 45
    • 2442431101 scopus 로고    scopus 로고
    • Large Coulomb blockade oscillations at room temperature in ultra-narrow wire channel MOSFETs formed by slight oxidation process
    • M. Saitoh, T. Murakami, and T. Hiramoto, "Large Coulomb blockade oscillations at room temperature in ultra-narrow wire channel MOSFETs formed by slight oxidation process," IEEE Trans. Nanotech., vol.2, pp.241-245, 2003.
    • (2003) IEEE Trans. Nanotech. , vol.2 , pp. 241-245
    • Saitoh, M.1    Murakami, T.2    Hiramoto, T.3
  • 46
    • 0035474332 scopus 로고    scopus 로고
    • Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires
    • H. Hasegawa and S. Kasai, "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires," Physica E, vol.11, pp.149-154, 2001.
    • (2001) Physica E , vol.11 , pp. 149-154
    • Hasegawa, H.1    Kasai, S.2
  • 47
    • 0036687130 scopus 로고    scopus 로고
    • A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon
    • S. Kasai and H. Hasegawa, "A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon," IEEE Electron Device Lett., vol.23, pp.446-448, 2002.
    • (2002) IEEE Electron Device Lett. , vol.23 , pp. 446-448
    • Kasai, S.1    Hasegawa, H.2
  • 48
    • 10444273119 scopus 로고    scopus 로고
    • Hexagonal binary decision diagram quantum circuit approach for ultra-low power III-V quantum LSIs
    • H. Hasegawa, S. Kasai, and T. Sato, "Hexagonal binary decision diagram quantum circuit approach for ultra-low power III-V quantum LSIs," IEICE Trans. Electron., vol.E87-C, no.11, pp.1757-1768, 2004.
    • (2004) IEICE Trans. Electron. , vol.E87-C , Issue.11 , pp. 1757-1768
    • Hasegawa, H.1    Kasai, S.2    Sato, T.3
  • 49
    • 0037290299 scopus 로고    scopus 로고
    • Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach
    • S. Kasai, M. Yumoto, and H. Hasegawa, "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach," Solid State Electron., vol.47, pp.199-204, 2003.
    • (2003) Solid State Electron. , vol.47 , pp. 199-204
    • Kasai, S.1    Yumoto, M.2    Hasegawa, H.3
  • 50
    • 0002684453 scopus 로고    scopus 로고
    • MBE growth and applications of silicon interface control layers
    • H. Hasegawa, "MBE growth and applications of silicon interface control layers," Thin Solid Films, vol.367, pp.58-67, 2000.
    • (2000) Thin Solid Films , vol.367 , pp. 58-67
    • Hasegawa, H.1
  • 51
    • 28144443324 scopus 로고    scopus 로고
    • Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
    • N. Shiozaki, T. Sato, and H. Hasegawa, "Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy," J. Vac. Sci. Technol. B, vol.23, pp.1714-1721, 2005.
    • (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 1714-1721
    • Shiozaki, N.1    Sato, T.2    Hasegawa, H.3
  • 52
    • 0141749837 scopus 로고    scopus 로고
    • Quantum computation with quantum dots
    • D. Lossand and D.P. DiVincenzo, "Quantum computation with quantum dots," Phys. Rev. A, vol.57, pp. 120-126, 1998.
    • (1998) Phys. Rev. A , vol.57 , pp. 120-126
    • Lossand, D.1    Divincenzo, D.P.2
  • 53
    • 0032516155 scopus 로고    scopus 로고
    • A silicon-based nuclear spin quantum computer
    • B.E. Kane, "A silicon-based nuclear spin quantum computer," Na ture, vol.393, pp. 133-137, 1998.
    • (1998) Nature , vol.393 , pp. 133-137
    • Kane, B.E.1


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