Wafer-level packaged light-emitting diodes using photodielectric resin

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 638-640

  Kim, Sang Mook ^a   Lee, Kwang Cheol ^a   Yu, Young Moon ^a   Baek, Jong Hyeob ^a   Jung, Gun Young ^b  

^a Korea Photonics Technology Institute (KOPTI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Light emitting diodes (LEDs); Photodielectric resin; Rearranged metal; Wafer level package

Indexed keywords

ACTIVE LAYER; BONDING PADS; FORWARD VOLTAGE; HIGH BRIGHTNESS; LIGHT-EMITTING DIODES (LEDS); METAL PAD; OPTICAL POWER; P-CONTACT; PASSIVATION LAYER; PHOTODIELECTRIC RESIN; REARRANGED METAL; WAFER LEVEL; WAFER-LEVEL PACKAGE; WIRE BONDING;

CURRENT DENSITY; DIODES; ELECTRONICS PACKAGING; GALLIUM NITRIDE; HYSTERESIS MOTORS; LIGHT EMISSION; METAL MOLDING; METALS; PASSIVATION; PRINTED CIRCUIT BOARDS; PRINTED CIRCUIT MANUFACTURE; RESINS; SEMICONDUCTING GALLIUM; WAFER BONDING;

LIGHT EMITTING DIODES;

EID: 67649344283     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2019834     Document Type: Article

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