Oxygen diffusion in zinc-oxide thin films prepared by pulsed-laser deposition

Journal of the Ceramic Society of Japan

Volumn 117, Issue 1365, 2009, Pages 666-670

  Matsumoto, Kenji ^a,b   Adachi, Yutaka ^b   Ohgaki, Takeshi ^b   Sakaguchi, Isao ^b   Ohashi, Naoki ^a,b   Haneda, Hajime ^a,b  

^a KYUSHU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Diffusion; Heterostructure; Isotope; Oxide; Oxygen; SIMS; Thin film; ZnO

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEPOSITION; DIFFUSION; HETEROJUNCTIONS; INTERFACES (MATERIALS); ISOTOPES; MASS SPECTROMETRY; OXIDE FILMS; OXIDES; OXYGEN; OXYGEN VACANCIES; PULSED LASER DEPOSITION; PULSED LASERS; SECONDARY ION MASS SPECTROMETRY; ZINC; ZINC OXIDE;

DEPOSITION CHAMBERS; DIFFUSION ANNEALING; DIFFUSION PROFILES; OXIDE-ION DIFFUSION; OXYGEN DIFFUSION; OXYGEN MIGRATION; VACANCY FORMATION; ZINC OXIDE THIN FILMS;

THIN FILMS;

EID: 67649342398     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.117.666     Document Type: Article

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