SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin films

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7265-7268

  Haneda, Hajime ^a,c   Ohgaki, Takeshi ^b   Sakaguchi, Isao ^a   Ryoken, Haruki ^c   Ohashi, Naoki ^a   Yasumori, Atsuo ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

Aluminum; Diffusion; GaN; Nitrogen; SIMS; Zinc

Indexed keywords

ALUMINUM; DIFFUSION; GALLIUM NITRIDE; IMPURITIES; ION BEAMS; MOLECULAR BEAM EPITAXY; NITROGEN; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; ZINC;

GALLIUM NITRIDE THIN FILMS; ISOTOPE DISTRIBUTION; NITROGEN ATMOSPHERE;

ISOTOPES;

EID: 33747180851     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.179     Document Type: Article

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