AlN tuning fork type resonators used with MEMS technologies

Proceedings - IEEE Ultrasonics Symposium

Volumn 1, Issue , 2006, Pages 560-563

  Isobe, A ^a   Asai, K ^a   Matsumoto, H ^a   Shibagaki, N ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CAPACITANCE RATIO; ELECTRICAL RESPONSE; LOW FREQUENCY; LOW-FREQUENCY RESONANCE; MEMS RESONATORS; MEMS TECHNOLOGY; PIEZOELECTRIC FILM; PIEZOELECTRIC PROPERTY; Q-VALUES; SI CHIPS; SI WAFER; STRONG RESONANCE; TUNING FORK TYPE; TUNING-FORK;

ALUMINUM; ALUMINUM NITRIDE; FINITE ELEMENT METHOD; MICROELECTROMECHANICAL DEVICES; NITRIDES; PIEZOELECTRICITY; RESONANCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TUNING;

RESONATORS;

EID: 67649337730     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2006.148     Document Type: Conference Paper

References (6)

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6. -, "IRE Standards on Piezoelectric Crystals-The Piezoelectric Vibrator: Definitions and Methods of Measurement, 1957," 57 IRE 14.S1, 1957, IEEE, 442 Hoes Lane, Piscataway, NJ.