Mechanical and electrical properties of the phosphor-doped nano-silicon film under an external electric field

Surface and Interface Analysis

Volumn 41, Issue 5, 2009, Pages 384-388

  Cheng, G G ^a   Ding, J N ^a,b   Xie, G X ^a,c   Kan, B ^a   Ling, Z Y ^a   Fan, Z ^a  

^a JIANGSU UNIVERSITY   (China)

^b CHANGZHOU UNIVERSITY   (China)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

Electrical control of friction; Mechanical and electrical properties; Nano ECR; Phosphor doped nano silicon film

Indexed keywords

ELECTRICAL CONTACT RESISTANCE; ELECTRICAL CONTROL OF FRICTION; EXTERNAL ELECTRIC FIELD; FIXED VOLTAGE; LOADING SPEED; MECHANICAL AND ELECTRICAL PROPERTIES; NANO-ECR; NANO-SILICON; NC-SI:H; OPEN CIRCUITS; SAMPLE SURFACE; SHORT CIRCUIT;

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; FRICTION; LUMINESCENCE; METALLIC FILMS; PHOSPHORS; PLASMA DEPOSITION; SURFACE TOPOGRAPHY;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 67649232463     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3033     Document Type: Article

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