Temperature dependence of magnetization in GaMnAs film with critical strain

Solid State Communications

Volumn 149, Issue 31-32, 2009, Pages 1300-1303

  Lee, Hakjoon ^a   Chung, Sunjae ^a   Lee, Sanghoon ^a   Liu, X ^b   Furdyna, J K ^b  

^a Korea University   (South Korea)

^b UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

A. Ferromagnetism; A. Semiconductor; D. Anisotropy; E. Planar Hall effect

Indexed keywords

A. FERROMAGNETISM; A. SEMICONDUCTOR; ANGLE DEPENDENCE; CRITICAL CONDITION; CRITICAL STRAINS; D. ANISOTROPY; E. PLANAR HALL EFFECT; ENERGY DIAGRAM; ENERGY MINIMA; FILM PLANES; FREE ENERGY DENSITY; HALL MEASUREMENTS; HALL RESISTANCE; IN-PLANE; MAGNETIC ANISOTROPY FIELD; MAGNETIC FREE ENERGY; MAGNETIZATION DIRECTION; MAGNETIZATION PROPERTY; OUT-OF-PLANE COMPONENTS; OUT-OF-PLANE DIRECTION; TEMPERATURE DEPENDENCE; TEMPERATURE INCREASE;

FERROMAGNETISM; FREE ENERGY; GALLIUM ALLOYS; GYRATORS; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MAGNETS; TEMPERATURE DISTRIBUTION;

MAGNETIC ANISOTROPY;

EID: 67649228092     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.05.006     Document Type: Article

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