Linear and nonlinear optical absorption coefficients and refractive index changes in strained GaN/AlN quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 8, 2009, Pages 1382-1385

  Yao, Wenjie ^a   Yu, Zhongyuan ^a   Liu, Yumin ^a   Jia, Boyong ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Absorption coefficients; Intraband transition; Piezoelectric effect; Strain

Indexed keywords

ABSORPTION COEFFICIENTS; CONDUCTION BAND EDGE; EFFECTIVE MASS APPROXIMATION; ELECTRONIC ENERGY LEVELS; ENERGY LEVEL; GAN/ALN QUANTUM DOTS; INTRABAND TRANSITION; INTRABAND TRANSITIONS; NONLINEAR OPTICAL ABSORPTION; OPTICAL INTENSITIES; PIEZOELECTRIC EFFECT; PIEZOELECTRIC POTENTIAL; QUANTUM DOT; REFRACTIVE INDEX CHANGES; STRAIN DISTRIBUTIONS; THIRD-ORDER;

ABSORPTION; ABSORPTION SPECTRA; ELECTRON MOBILITY; LIGHT ABSORPTION; LIGHT REFRACTION; OPTICAL WAVEGUIDES; PIEZOELECTRIC TRANSDUCERS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTOR QUANTUM DOTS; WAVE FUNCTIONS;

PIEZOELECTRICITY;

EID: 67649224126     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.03.003     Document Type: Article

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