Growth of zinc sulfide thin films on (100)Si with the successive ionic layer adsorption and reaction method studied by atomic force microscopy

Applied Surface Science

Volumn 136, Issue 1-2, 1998, Pages 131-136

  Valkonen, Mika P ^a   Lindroos, Seppo ^a   Resch, Roland ^b,c   Leskelä, Markku ^a   Friedbacher, Gernot ^c   Grasserbauer, Manfred ^c  

^a UNIVERSITY OF HELSINKI   (Finland)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

AFM; SILAR method; Thin film; ZnS

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; DISSOLUTION; FILM GROWTH; MORPHOLOGY; SEMICONDUCTOR GROWTH; SILICON WAFERS; SODIUM COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS; ZINC SULFIDE;

SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION (SILAR) METHOD;

SEMICONDUCTING FILMS;

EID: 0032181892     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00327-4     Document Type: Article

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