SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 24, 2009, Pages

Increased tunneling magnetoresistance using normally bcc CoFe alloy electrodes made amorphous without glass forming additives

(6) Gao, Li a,b Jiang, Xin a Yang, See Hun a Rice, Philip M a Topuria, Teya a Parkin, Stuart S P a

a IBM ALMADEN RESEARCH CENTER (United States)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALUMINA; AMORPHOUS LAYER; COFE ALLOYS; CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; DENSITY OF STATE; FERMI ENERGY; GLASS FORMING ADDITIVES; INTERFACIAL BONDING; MAGNETIC TUNNEL JUNCTION; TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE; X RAY EMISSION SPECTROSCOPY;

AMORPHOUS ALLOYS; ATOMIC SPECTROSCOPY; ELECTRIC RESISTANCE; EMISSION SPECTROSCOPY; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MOLECULAR SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

AMORPHOUS FILMS;

EID: 67649210530 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.102.247205 Document Type: Article

Times cited : (19)

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