Concentration and band offset dependence of the electronic basic transition of cubic InxGa1-xN/InyGa1-yN quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 8, 2009, Pages 1466-1468

  Hernandez Cocoletzi H ^a   Contreras Solorio, D A ^b   Vlaev, S J ^b   Rodriguez Vargas I ^b  

^a Cuerpo Académico Ingeniería en Materiales   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE ZACATECAS   (Mexico)

Author keywords

Electronic structure; Quantum wells; Semiconductor compounds

Indexed keywords

BAND GAPS; BAND OFFSETS; EMPIRICAL TIGHT BINDING; ENERGY TRANSITIONS; EXPERIMENTAL DATA; NEAREST-NEIGHBOUR INTERACTIONS; ORBITAL BASIS; QUANTUM WELL; QUANTUM WELLS; SEMICONDUCTOR COMPOUNDS; SPIN-ORBIT COUPLINGS; SURFACE GREEN-FUNCTION MATCHING; THEORETICAL CALCULATIONS; TRANSITION ENERGY; VALENCE BAND OFFSETS; VIRTUAL CRYSTAL APPROXIMATION; WELL WIDTH;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 67649210261     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.04.016     Document Type: Article

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