Control of band discontinuity at III-V semiconductor interface by Si intralayers

Materials Science and Engineering: B

Volumn 107, Issue 3, 2004, Pages 241-243

  Ekpunobi, A J ^a  

^a NNAMDI AZIKIWE UNIVERSITY   (Nigeria)

Author keywords

Band discontinuity; Induced potential; Intralayers

Indexed keywords

BAND STRUCTURE; CAPACITORS; DIFFUSION; INTERFACES (MATERIALS); MICROSCOPIC EXAMINATION; NEGATIVE IONS; POSITIVE IONS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BAND DISCONTINUITY; INDUCED POTENTIAL; INTRALAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1542335395     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.09.041     Document Type: Article

References (19)

1. Moreno M., Sacedon J.L., Alonso M., Horicke M., Hey R., Avila J., Asensio M.C., Horn K., Ploog K.H. Phys. Rev. B58:1998;13767.
2. Saito T., Hashimoto Y., Ikoma T. Phys. Rev. B50:1994;17242.
3. Peressi M., Baroni S., Resta R., Baldereschi A. Phys. Rev. B43:1991;7347.
4. Harrison W.A., Tersoff J. J. Vac. Sci. Technol. B. 4:1986;1068.
5. Harrison W.A. J. Vac. Sci. Technol. 14:1977;1016.
6. Ekpunobi A.J., Okeke C.E., Animalu A.O.E. Physica B. 271:1999;364.
7. Ekpunobi A.J., Animalu A.O.E. Superlattices Microstruct. 29:2001;83.
8. Ekpunobi A.J. Nonlinear Opt. 28:2001;129.
9. Ekpunobi A.J. Nonlinear Opt. 28:2001;257.
10. Ekpunobi A.J., Animalu A.O.E. Superlattices Microstruct. 31:2002;247.
11. Ekpunobi A.J., Animalu A.O.E. Superlattices Microstruct. 31:2002;253.
12. W.A. Harrison, Electronic Structure and the Properties of Solids, Freeman, San Francisco, 1980, p. 49.
13. Sorba L., Bratina G., Antonini A., Walker J.F., Mikoric M., Ceccone G., Franciosi A. Phys. Rev. B. 43:1991;2450.
14. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981, p. 71.
15. Katnani A.D., Bauer R.S. Phys. Rev. B. 33:1986;1106.
16. Waldrop J.R., Grant R.W., Kraut E.A. J. Vac. Sci. Technol. B. 5:1987;1209.
17. Godby R.W., Schluter M., Sham L.J. Phys. Rev. B. 37:1988;10159.
18. Yu E.T., Chow D.H., McGill T.C. Phys. Rev. B. 38:1988;12764.
19. Hirakawa K., Hashimoto Y., Ikoma T. Appl. Phys. Lett. 57:1990;2555.