Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation

Applied Physics Letters

Volumn 87, Issue 3, 2005, Pages

  De Sousa, J S ^a   Leburton, J P ^b   Freire, V N ^a   Da Silva Jr , E F ^c  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED ABSORPTION; INTRABAND ABSORPTION; INTRABAND TRANSITIONS; QUANTUM DOT ORIENTATION;

ABSORPTION; CRYSTAL ORIENTATION; CRYSTALS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SILICON;

NANOSTRUCTURED MATERIALS;

EID: 24144456529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2000336     Document Type: Article

References (18)

1. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franz, and F. Priolo, Nature (London) 408, 440 (2000).
2. J.-Z. Zhang and I. Galbraith, Appl. Phys. Lett. 84, 1934 (2004).
3. D. Pan, E. Towe, and S. Kennerly, Appl. Phys. Lett. 73, 1937 (1998).
4. H. C. Liu, M. Gao, J. McCaffrey, Z. R. Wasilewski, and S. Fafard, Appl. Phys. Lett. 78, 79 (2001).
5. L. Chu, A. Zrenner, M. Bichler, and G. Abstreiter, Appl. Phys. Lett. 79, 2249 (2001).
6. B. Aslan, H. C. Liu, M. Korkusinski, S.-J. Cheng, and P. Hawrylak, Appl. Phys. Lett. 82, 630 (2003).
7. L. Jiang, S. S. Li, N.-T. Yeh, J.-I. Chyi, C. E. Ross, and K. S. Jones, Appl. Phys. Lett. 82, 1986 (2003).
8. P. Boucaud, V. Le Thanh, S. Sauvage, D. D́barre, and D. Bouchier, Appl. Phys. Lett. 74, 401 (1999).
9. G. Allan and C. Delerue, Phys. Rev. B 66, 233303 (2002).
10. A. Thean and J.-P. Leburton, J. Appl. Phys. 89, 2808 (2001).
11. J. S. de Sousa, A. V. Thean, J.-P. Leburton, and V. N. Freire, J. Appl. Phys. 92, 6182 (2002).
12. See, for example, Appl. Phys. Lett. 0003-6951 10.1063/1.116085 68, 1377 (1996); Thin Solid Films 0040-6090 10.1016/S0040-6090(98)00479-9 321, 234 (1998); IEDM 99, 375 (1999); J. Vac. Sci. Technol. B 1071-1023 10.1116/1. 1508804 20, 2075 (2002); J. Appl. Phys. 93, 5637 (2003).
13. See, for example, Appl. Phys. Lett. 0003-6951 10.1063/1.116085 68, 1377 (1996); Thin Solid Films 0040-6090 10.1016/S0040-6090(98)00479-9 321, 234 (1998); IEDM 99, 375 (1999); J. Vac. Sci. Technol. B 1071-1023 10.1116/1. 1508804 20, 2075 (2002); J. Appl. Phys. 93, 5637 (2003).
14. See, for example, Appl. Phys. Lett. 0003-6951 10.1063/1.116085 68, 1377 (1996); Thin Solid Films 0040-6090 10.1016/S0040-6090(98)00479-9 321, 234 (1998); IEDM 99, 375 (1999); J. Vac. Sci. Technol. B 1071-1023 10.1116/1. 1508804 20, 2075 (2002); J. Appl. Phys. 93, 5637 (2003).
15. See, for example, Appl. Phys. Lett. 0003-6951 10.1063/1.116085 68, 1377 (1996); Thin Solid Films 0040-6090 10.1016/S0040-6090(98)00479-9 321, 234 (1998); IEDM 99, 375 (1999); J. Vac. Sci. Technol. B 1071-1023 10.1116/1. 1508804 20, 2075 (2002); J. Appl. Phys. 93, 5637 (2003).
16. See, for example, Appl. Phys. Lett. 0003-6951 10.1063/1.116085 68, 1377 (1996); Thin Solid Films 0040-6090 10.1016/S0040-6090(98)00479-9 321, 234 (1998); IEDM 99, 375 (1999); J. Vac. Sci. Technol. B 1071-1023 10.1116/1. 1508804 20, 2075 (2002); J. Appl. Phys. 93, 5637 (2003).
17. J. S. de Sousa, J.-P. Leburton, A. V. Thean, V. N. Freire, and E. F. da Silva Jr., Appl. Phys. Lett. 82, 2685 (2003).
18. S. L. Chuang, in Physics of Optoelectronic Devices, Wiley Series in Pure and Applied Optics (Wiley, New York, 1995).