Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer

Current Applied Physics

Volumn 9, Issue 5, 2009, Pages 943-945

  Jung, Soon Il ^a   Yun, Ilgu ^a   Lee, Chang Myung ^b   Lee, Joo In ^c  

^a Yonsei University   (South Korea)

^b EpiValley Co Ltd   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Gallium nitride; Metal organic chemical vapor deposition; Photoluminescence

Indexed keywords

ACTIVE LAYERS; ACTIVE REGIONS; ELECTRON CAPTURES; EMITTING LAYERS; INGAN/GAN; INJECTED CARRIERS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; MULTIPLE-QUANTUM-WELL STRUCTURES; PHOTOLUMINESCENCE MEASUREMENTS; PL INTENSITIES; POTENTIAL WELLS; SPECTRAL CHARACTERISTICS;

GALLIUM ALLOYS; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; VAPORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 67349283060     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.08.055     Document Type: Article

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