Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 768-773

  Sato, Shin ichiro ^a   Miyamoto, Haruki ^a,b   Imaizumi, Mitsuru ^c   Shimazaki, Kazunori ^c   Morioka, Chiharu ^c   Kawano, Katsuyasu ^b   Ohshima, Takeshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Carrier removal rate; Damage coefficient; Degradation modeling; Proton irradiation; Triple junction solar cell

Indexed keywords

CARRIER REMOVAL RATE; DAMAGE COEFFICIENT; DEGRADATION MODELING; DEVICE SIMULATORS; ENERGY PROTONS; EXPERIMENTAL VALUES; EXTERNAL QUANTUM EFFICIENCIES; LIFE TIME PREDICTIONS; MINORITY CARRIER DIFFUSION LENGTHS; ONE-DIMENSIONAL; OPEN-CIRCUIT VOLTAGES; SHORT-CIRCUIT CURRENTS; TRIPLE JUNCTIONS; TRIPLE-JUNCTION SOLAR CELL;

BIOLOGICAL MATERIALS; CARRIER CONCENTRATION; CELL MEMBRANES; DEGRADATION; OPTICAL INSTRUMENTS; PHOTOVOLTAIC CELLS; PROTONS; SOLAR CELLS; SOLAR ENERGY; SWITCHING CIRCUITS;

PROTON IRRADIATION;

EID: 67349280349     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.09.044     Document Type: Article

References (23)

1. Messenger S.R., Summers G.P., Burke E.A., Walters R.J., and Xapsos M.A. Modeling solar cell degradation in space: a comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches. Prog. Photovolt: Res. Appl. 9 (2001) 103-121
2. Summers G.P., Burke E.A., Shapiro P., Messenger S.R., and Walters R.J. Damage correlations in semiconductors exposed to gamma, electron and proton radiations. IEEE Trans. Nucl. Sci. 40 (1993) 1372-1379
3. Summers G.P., Burke E.A., and Xapsos M.A. Displacement damage analogs to ionizing radiation effects. Radiat. Meas. 24 (1995) 1-8
4. Messenger S.R., Burke E.A., Summers G.P., Xapsos M.A., Walters R.J., Jackson E.M., and Weaver B.D. Nonionizing energy loss (NIEL) for heavy ions. IEEE Trans. Nucl. Sci. 46 (1999) 1595-1602
5. Messenger S.R., Burke E.A., Summers G.P., and Walters R.J. Application of displacement damage dose analysis to low-energy protons on silicon devices. IEEE Trans. Nucl. Sci. 46 (2002) 2690-2694
6. Jun I., Xapsos M.A., Messenger S.R., Burke E.A., Walters R.J., Summers G.P., and Jordan T. Proton nonionizing energy loss (NIEL) for device applications. IEEE Trans. Nucl. Sci. 50 (2003) 1924-1928
7. Yamaguchi M. Radiation-resistant solar cells for space use. Sol. Energy Mater. Sol. Cells 68 (2001) 31-53
8. Yamaguchi M. Multi-junction solar cells and novel structures for solar cell applications. Physica E 14 (2002) 84-90
9. Yamaguchi M. III-V compound multi-junction solar cells: present and future. Sol. Energy Mater. Sol. Cells 75 (2003) 261-269
10. Nishioka K., Takamoto T., Agui T., Kaneiwa M., Uraoka Y., and Fuyuki T. Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems. Sol. Energy Mater. Sol. Cells 90 (2006) 1308-1321
11. Yamaguchi M., Takamoto T., Araki K., and Daukes N.E. Multi-junction III-V solar cells: current status and future potential. Sol. Energy 79 (2005) 78-85
12. Iles P.A. Evolution of space solar cells. Sol. Energy Mater. Sol. Cells 68 (2001) 1-13
13. Sumita T., Imaizumi M., Matsuda S., Ohshima T., Ohi A., and Itoh H. Proton radiation analysis of multi-junction space solar cells. Nucl. Instr. and Meth. B 206 (2003) 448-451
14. Messenger S.R., Burke E.A., Walters R.J., Warner J.H., and Summers G.P. Using SRIM to calculate the relative damage coefficients for solar cells. Prog. Photovolt: Res. Appl. 13 (2005) 115-123
15. Imaizumi M., Matsuda S., Kawakita S., Sumita T., Takamoto T., Ohshima T., and Yamaguchi M. Activity and current status of R&D on space solar cells in Japan. Prog. Photovolt: Res. Appl. 13 (2005) 529-543
16. 〈http://www.pv.unsw.edu.au/links/products/pc1d.asp〉
17. 〈http://www.srim.org/〉
18. Oka T., Ouchi K., and Mochizuki K. Characterization of InGaP/GaAs heterojunction bipolar transistors with a heavily doped base. Jpn. J. Appl. Phys. 40 (2001) 5221-5226
19. Cheng S. An InGaP/AlGaAs/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity. Superlattices Microstruct. 33 (2003) 1-7
20. Ferrini R., Guizzetti G., Patrini1 M., Parisini A., Tarricone L., and Valenti B. Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV. Eur. Phys. J. B 27 (2002) 449-458
21. 〈http://www.ioffe.ru/SVA/NSM/Semicond/〉
22. +p InGaP diodes and solar cells. J. Appl. Phys. 91 (2002) 2391-2397
23. Loferski J.J., and Rappaport P. Radiation damage in Ge and Si detected by carrier lifetime changes: damage thresholds. Phys. Rev. 111 (1958) 432-439