Parameter modeling for wafer probe test

IEEE Transactions on Electronics Packaging Manufacturing

Volumn 32, Issue 2, 2009, Pages 81-88

  Liu, Yong ^a   Luk, Timwak ^a   Irving, Scott ^a  

^a FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

Finite element analysis (FEA); Parameter modeling; Wafer probe test

Indexed keywords

BOND PADS; CONTACT FRICTIONS; CONTACT MODELS; DEGREE OF DAMAGES; DESIGN-OF-EXPERIMENTS; FINITE ELEMENTS; FINITE-ELEMENT ANALYSIS (FEA); FINITE-ELEMENT MODELING; ILD LAYERS; INTER LAYER DIELECTRICS; METAL THICKNESS; MODELING RESULTS; PARAMETER MODELING; PRINCIPAL STRESS; PROBE TIPS; ROOT CAUSE; TEST DATUM; TEST MODELING; WAFER PROBE TEST; WIRE BONDINGS;

DENSITY (OPTICAL); DIFFRACTIVE OPTICAL ELEMENTS; FINITE ELEMENT METHOD; FRICTION; TESTING; WAFER BONDING; WIRE;

PROBES;

EID: 67349272715     PISSN: 1521334X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEPM.2009.2017514     Document Type: Article

References (8)

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