Deposition of thick boron-doped homoepitaxial single crystal diamond by microwave plasma chemical vapor deposition

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 704-706

  Ramamurti, R ^a   Becker, M ^b   Schuelke, T ^b   Grotjohn, T A ^a,b   Reinhard, D K ^a,b   Asmussen, J ^a,b  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b Fraunhofer Center for Coatings and Laser Applications   (United States)

Author keywords

Diamond growth; P type doping; Plasma assisted CVD; Single crystal diamond

Indexed keywords

BORON CONTENT; BORON DOPED DIAMOND; BORON-DOPED; DIAMOND GROWTH; DIBORANE; ELECTRICAL CONDUCTIVITY; EXPERIMENTAL CONDITIONS; EXPERIMENTAL STUDIES; FEED GAS; FOUR-POINT PROBE; HIGH POWER DENSITY; HIGH QUALITY SINGLE CRYSTALS; HOMOEPITAXIAL; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; P-TYPE DOPING; SINGLE CRYSTAL DIAMOND; SYNTHESIZED MATERIALS;

BORON; CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GAS ABSORPTION; MICROWAVES; PLASMA DEPOSITION; PLASMAS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); VAPORS;

DIAMONDS;

EID: 67349224647     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.01.031     Document Type: Article

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