Mass attenuation coefficients, effective atomic numbers and electron densities of undoped and differently doped GaAs and InP crystals

Annals of Nuclear Energy

Volumn 36, Issue 7, 2009, Pages 869-873

  Demir, L ^a   Han, I ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE ATOMIC NUMBER; ELECTRON DENSITIES; GAAS; INP; MASS ATTENUATION COEFFICIENTS; PHOTON ENERGY; POINT SOURCES; SEMI-INSULATING; SI DETECTORS; TOTAL MASS;

ATOMS; CARRIER CONCENTRATION; CRYSTALS; ELECTRON DENSITY MEASUREMENT; ELECTRONS; GALLIUM ALLOYS; RADIATION; SUGAR (SUCROSE); ZINC;

SEMICONDUCTING GALLIUM;

EID: 67349203980     PISSN: 03064549     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.anucene.2009.03.015     Document Type: Article

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