Bistable resistance switching in surface-oxidized C12A7:e- single-crystal

Materials Science and Engineering: B

Volumn 161, Issue 1-3, 2009, Pages 76-79

  Adachi, Yutaka ^a   Kim, Sung Wng ^a   Kamiya, Toshio ^a,b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

C12A7; Electric field doping; Oxygen ion conduction; Reduction treatment; Resistance switching; Resistive random access memory (ReRAM)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; IONS; OXYGEN; RRAM; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; SWITCHING; TEMPERATURE;

BAND INSULATORS; BISTABLE RESISTANCE; C12A7; ELECTRIC FIELD DOPING; FREE OXYGEN IONS; OXYGEN-ION CONDUCTION; RANDOM ACCESS MEMORY; REDUCTION TREATMENT; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY;

DOPING (ADDITIVES);

EID: 67349201390     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.11.042     Document Type: Article

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