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Volumn 161, Issue 1-3, 2009, Pages 76-79
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Bistable resistance switching in surface-oxidized C12A7:e- single-crystal
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Author keywords
C12A7; Electric field doping; Oxygen ion conduction; Reduction treatment; Resistance switching; Resistive random access memory (ReRAM)
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC FIELDS;
IONS;
OXYGEN;
RRAM;
SINGLE CRYSTALS;
SPECTROSCOPIC ANALYSIS;
SPECTROSCOPIC ELLIPSOMETRY;
SWITCHING;
TEMPERATURE;
BAND INSULATORS;
BISTABLE RESISTANCE;
C12A7;
ELECTRIC FIELD DOPING;
FREE OXYGEN IONS;
OXYGEN-ION CONDUCTION;
RANDOM ACCESS MEMORY;
REDUCTION TREATMENT;
RESISTANCE SWITCHING;
RESISTIVE RANDOM ACCESS MEMORY;
DOPING (ADDITIVES);
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EID: 67349201390
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2008.11.042 Document Type: Article |
Times cited : (22)
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References (14)
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