Two methods of realising 10 nm T-gate lithography

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 1067-1070

  Bentley, S ^a   Li, X ^a   Moran, D A J ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Electron beam lithography; HEMT; ICP; Reactive ion etching; RIE; T gate

Indexed keywords

DEVELOPMENT PROCESS; GATE LITHOGRAPHIES; GATE PROCESS; HEMT; ICP; PATTERN TRANSFER PROCESS; PATTERN TRANSFERS; PROCESS FLOWS; RIE; T-GATE; T-GATES; ZEP520A;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; INDUCTIVELY COUPLED PLASMA; IONS; SILICON NITRIDE;

REACTIVE ION ETCHING;

EID: 67349192653     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.12.029     Document Type: Article

References (6)

1. Bentley S., Li X., Moran D., and Thayne I. Microelectronic Engineering 85 (2008) 1375-1378
2. Kurihara K., Iwadate K., Namatsu H., Nagase M., Takenaka H., and Murase K. Japanese Journal of Applied Physics 34 (1995) 6940-6946
3. Namatsu H., Nagase M., Kurihara K., Iwadate K., Furuta T., and Murase K. Journal of Vacuum Science and Technology B 13 4 (1995) 1473-1476
4. Yamaguchi T., and Namatsu H. Journal of Vacuum Science and Technology B 22 3 (2004) 1037-1043
5. Li X., Hill R., Zhou H., Wilkinson C., and Thayne I. Microelectronic Engineering 85 5-6 (2008) 996-999
6. Li X., Zhou H., Abrokwah J., Zurcher P., Rajagopalan K., Liu W., Gregory R., Passlack M., and Thayne I. Microelectronic Engineering 85 5-6 (2008) 966-968