Effects of growth variables on the properties of single crystalline ZnO thin film grown by inductively coupled plasma metal organic chemical vapor deposition

Thin Solid Films

Volumn 517, Issue 15, 2009, Pages 4432-4435

  Park, Ju Hoon ^a   Lee, Chang Bae ^b   Kim, Il Soo ^b   Jang, Seong Joo ^c   Lee, Byung Teak ^b  

^a Nambu University   (South Korea)

^b Chonnam National University   (South Korea)

^c Dongshin University   (South Korea)

Author keywords

Ga doping; Inductively coupled plasma; Metal organic chemical vapor deposition; Zinc oxide

Indexed keywords

ELECTRICAL PROPERTIES; FILM PROPERTIES; FREE-CARRIER CONCENTRATIONS; GA-DOPED; GA-DOPING; GROWTH CONDITIONS; GROWTH VARIABLES; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; SAMPLE BIAS; SINGLE-CRYSTAL FILMS; SINGLE-CRYSTALLINE; SMOOTH SURFACES; ZNO; ZNO FILMS; ZNO THIN FILMS;

CARRIER CONCENTRATION; CORUNDUM; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FILM GROWTH; GALLIUM; INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDE FILMS; PHOTORESISTS; PLASMA DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTAL SURFACES; SINGLE CRYSTALS; VAPOR DEPOSITION; VAPORS; ZINC; ZINC OXIDE;

INDUCTIVELY COUPLED PLASMA;

EID: 67349143084     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.008     Document Type: Article

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