Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO2

Surface and Coatings Technology

Volumn 203, Issue 17-18, 2009, Pages 2482-2485

  Joshi, Kapil U ^a   Kabiraj, D ^b   Narsale, A M ^a   Avasthi, D K ^b   Warang, T N ^a   Kothari, D C ^a  

^a UNIVERSITY OF MUMBAI   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Co sputtering; FTIR etc.; GXRD; Nanoparticles; UV visible NIR

Indexed keywords

ABSORPTION EDGES; ANNEALING TEMPERATURES; ATOM BEAMS; CO-SPUTTERING; DIFFRACTION PEAKS; FT-IR SPECTRUM; FTIR ETC.; GXRD; MATRIXES; NANO PARTICLE SIZES; PHASE FORMATIONS; RED SHIFTS; SI-GE ALLOYS; UV-VIS ABSORPTION SPECTROSCOPIES; UV-VISIBLE SPECTRUM; UV-VISIBLE-NIR;

ABSORPTION; ABSORPTION SPECTROSCOPY; ANNEALING; ATOMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM; INFRARED DEVICES; NANOPARTICLES; PHASE SEPARATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; SILICON COMPOUNDS; SODIUM COMPOUNDS; ULTRAVIOLET SPECTROSCOPY;

COMPOSITE FILMS;

EID: 67349132450     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.02.042     Document Type: Article

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