Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1-xGex films

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 1, 2003, Pages 263-268

  Kartopu, G ^a   Bayliss, S C ^a   Ekinci, Y ^b   Parker, E H C ^c   Naylor, T ^c  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b MAX PLANCK INSTITUTE FOR DYNAMICS AND SELF ORGANIZATION   (Germany)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; CURRENT DENSITY; ETCHING; NANOSTRUCTURED MATERIALS; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS;

PHONON CONFINEMENT; POROUS FILMS; SILICON GERMANIUM CRYSTALS; SILICON GERMANIUM NANOCRYSTALS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0037701243     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306512     Document Type: Conference Paper

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