Effect of annealing atmosphere on phase formation and electrical characteristics of bismuth ferrite thin films

Materials Research Bulletin

Volumn 44, Issue 8, 2009, Pages 1747-1752

  Simoes A Z ^a   Riccardi, C S ^b   Dos Santos, M L ^b   Garcia, F González ^a   Longo, E ^b   Varela, J A ^b  

^a FEDERAL UNIVERSITY OF ITAJUBÁ   (Brazil)

^b SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

A. Thin films; B. Chemical synthesis; C. Atomic force microscopy; D. Ferroelectricity

Indexed keywords

A. THIN FILMS; AIR ATMOSPHERE; ANNEALING ATMOSPHERES; B. CHEMICAL SYNTHESIS; BFO FILMS; BISMUTH FERRITES; C. ATOMIC FORCE MICROSCOPY; CRYSTALLINITY; D. FERROELECTRICITY; DIGITAL MEMORY; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; FERROELECTRIC HYSTERESIS LOOP; NON-VOLATILE; PEROVSKITE STRUCTURES; PHASE FORMATIONS; ROOM TEMPERATURE; SI SUBSTRATES; SOFT CHEMICAL METHOD; SPINTRONICS; STORAGE MEDIA;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMS; BISMUTH; ELECTRIC PROPERTIES; FERRITE; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; NONVOLATILE STORAGE; OXIDE MINERALS; PEROVSKITE; SEMICONDUCTING BISMUTH COMPOUNDS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC FILMS;

EID: 67349111666     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2009.03.011     Document Type: Article

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