Electron- and ion-beam lithography for the fabrication of nanomechanical devices integrated on CMOS circuits

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 1046-1049

  Rius, Gemma ^a   Llobet, Jordi ^a   Arcamone, Julien ^a   Borrisé, Xavier ^b   Pérez Murano, Francesc ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b CSIC   (Spain)

Author keywords

CMOS circuits; Electron and ion beam lithography; MOS transistor; Nanomechanical device

Indexed keywords

BEAM ENERGIES; CMOS CIRCUITS; ELECTRICAL CHARACTERIZATIONS; ELECTRON-BEAM LITHOGRAPHIES; EXPOSURE CONDITIONS; IN-SITU; MONOLITHICALLY INTEGRATED; MOS TRANSISTOR; NANOMECHANICAL DEVICE; SPECIFIC SITES;

CMOS INTEGRATED CIRCUITS; ELECTRONS; FABRICATION; ION BEAMS; IONS; LITHOGRAPHY; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

ELECTRIC NETWORK ANALYSIS;

EID: 67349099145     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.01.006     Document Type: Article

References (7)

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