Proton implantation mechanism in GaN layer transfer by using the ion-cut process

Journal of the Korean Physical Society

Volumn 50, Issue 5 PART I, 2007, Pages 1542-1547

  Woo, H J ^a   Choi, H W ^a   Kim, G D ^a   Hong, W ^a   Kim, J K ^a   Eum, C H ^a   Bae, Y H ^b  

^a Korea Institute of Geosceince and Mineral Resources   (South Korea)

^b Uiduk University   (South Korea)

Author keywords

GaN epi wafer; GaN on insulator; Ion cut; Proton implantation

Indexed keywords

EID: 34250184677     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.50.1542     Document Type: Article

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