Ion-implanted hydrogen in gallium nitride

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 386-390

  Myers, S M ^a   Han, J ^a   Headley, T J ^a   Hills, C R ^a   Petersen, G A ^a   Seager, C H ^a   Wampler, W R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Bubbles; Defects; Gallium nitride; Hydrogen; Ion implantation

Indexed keywords

ANNEALING; BUBBLE FORMATION; CHEMICAL BONDS; CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; HYDROGEN; INFRARED SPECTROSCOPY; ION IMPLANTATION; PASSIVATION; SOLUBILITY; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; ION-CHANNELING ANALYSIS; NUCLEAR-REACTION PROFILING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033513669     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00695-8     Document Type: Article

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