Wireless UV sensor based on photocapacitive effect in GaN

Electronics Letters

Volumn 45, Issue 12, 2009, Pages 653-654

  Ciplys D ^a,b   Chivukula, V S ^a   Sereika, A ^b   Rimeika, R ^b   Shur, M S ^a   Hu, X ^c   Gaska, R ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b VILNIUS UNIVERSITY   (Lithuania)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN/SAPPHIRE; LC-OSCILLATOR; OSCILLATOR FREQUENCY; OUTPUT SIGNAL; UV SENSOR;

GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SENSORS;

ULTRAVIOLET DEVICES;

EID: 67149116616     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.0324     Document Type: Article

References (9)

1. Calle, F., Pedros, J., Pallacios, T., and Grajal, J.: Nitride-based surface acoustic wave devices and applications , Phys. Status Solid C, 2005, 2, (3), p. 976-983 (Pubitemid 41525154)
2. Ciplys, D., Rimeika, R., Sereika, A., Gaska, R., Shur, M.S., Yang, J.W., and Khan, M.A.: GaN-based SAW delay-line oscillator , Electron. Lett., 2001, 37, (8), p. 545-546 10.1049/el:20010358 0013-5194
3. Ciplys, D., Rimeika, R., Shur, M.S., Rumyantsev, S., Gaska, R., Sereika, A., Yang, J., and Asif Khan, M.: Visible-blind photoresponse of GaN-based surface acoustic wave oscillator , App. Phys. Lett., 2002, 80, (11), p. 2020-2022 10.1063/1.1459485
4. Sharma, P., and Sreenevas, K.: Highly sensitive ultraviolet detector based on ZnO/LiNbO3 hybrid surface acoustic wave filter , Appl. Phys. Lett., 2003, 83, (17), p. 3617-3704 10.1063/1.1622436 0003-6951
5. Chen, T.C., Lin, Y.T., Lin, C.Y., Chen, W.C., Chen, M.R., Kao, H.-L., Chyi, J.-I., and Hsu, C.-H.: Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors , IEEE Trans. Ultrason., Ferroelectr., Freq. Control, 2008, 55, (2), p. 489-493 0885-3010 (Pubitemid 351356090)
6. Emanetoglu, N.V., Zhu, J., Chen, Y., Zhong, J., Chen, Y., and Lu, Y.: Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r-plane sapphire , Appl. Phys. Lett., 2004, 85, (17), p. 3702-3704 10.1063/1.1811383 0003-6951
7. Chivukula, V.S., Ciplys, D., Shur, M.S., and Rimeika, R.: Capacitance controlled SAW UV sensor , Proc. IEEE Sensors Conf., Lecce, Italy, October, 2008, p. 984-987
8. Chung, H.M., Pan, Y.C., Chuang, W.C., Chen, N.C., Tsai, C.C., Lee, M.C., Chen, W.H., and Chen, W.K.: Long term photocapacitance decay behavior in undoped GaN , Jpn. J. Appl. Phys, 2001, 40, p. 5871-5874 0021-4922
9. Sheu, J.K., Kao, C.J., Lee, M.L., Lai, W.C., Yeh, L.S., Chi, G.C., Chang, S.J., Su, Y.K., and Tsai, J.M.: Nitride-based ultraviolet metal-semiconductor- metal photodetectors with a low-temperature GaN layer , J. Electron. Mater., 2002, 32, (5), p. 400-402 0361-5235