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Volumn 7271, Issue , 2009, Pages

Fabrication of metrology test structures for future technology nodes using high resolution variable-shaped E-Beam direct write

Author keywords

CD SEM metrology; Defects; Electron beam direct write; Line edge roughness; Line width roughness; Scatterometry

Indexed keywords

CD-SEM METROLOGY; ELECTRON BEAM DIRECT WRITE; LINE EDGE ROUGHNESS; LINE WIDTH ROUGHNESS; SCATTEROMETRY;

EID: 67149084968     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814181     Document Type: Conference Paper
Times cited : (6)

References (9)
  • 1
    • 4444294649 scopus 로고    scopus 로고
    • 65 nm device manufacture using shaped e-beam lithography
    • L. Pain et al., "65 nm Device manufacture using shaped e-beam lithography", Jpn. J. of Appl. Phys., 43(6B), 3755-3761 (2004).
    • (2004) Jpn. J. of Appl. Phys. , vol.43 , Issue.6 , pp. 3755-3761
    • Pain, L.1
  • 2
    • 67149083500 scopus 로고    scopus 로고
    • Emerging Lithographic Technologies XII
    • L. Pain et al. in "Emerging Lithographic Technologies XII", San Jose, 2008, SPIE Proceedings 6921 69211S (2008).
    • (2008) San Jose, 2008, SPIE Proceedings , vol.6921
    • Pain, L.1
  • 3
    • 34247617318 scopus 로고    scopus 로고
    • High resolution variable-shaped beam direct write
    • P. Hahmann et al., "High resolution variable-shaped beam direct write", Microelectron. Eng., Vol.84, 774 (2007).
    • (2007) Microelectron. Eng. , vol.84 , pp. 774
    • Hahmann, P.1
  • 4
    • 44149103173 scopus 로고    scopus 로고
    • Integration of EBDW of one entire metal layer as substitution for optical lithography in 220 nm node microcontrollers
    • J. Kretz et al., "Integration of EBDW of one entire metal layer as substitution for optical lithography in 220 nm node microcontrollers", Microelectron. Eng. 85, 792-795 (2008).
    • (2008) Microelectron. Eng. , vol.85 , pp. 792-795
    • Kretz, J.1
  • 5
    • 67149106314 scopus 로고    scopus 로고
    • Gate edge roughness in electron beam direct write and its influence to device characteristics
    • K.-H. Choi et al., "Gate edge roughness in electron beam direct write and its influence to device characteristics" Proc. SPIE, Vol.6921, 69210J (2008).
    • (2008) Proc. SPIE , vol.6921
    • Choi, K.-H.1
  • 7
    • 18144371955 scopus 로고    scopus 로고
    • Line edge roughness: Is here to stay
    • A. E. Braun, "Line edge roughness: Is here to stay", Semiconductor international, Vol.28, 44-50 (2008).
    • (2008) Semiconductor International , vol.28 , pp. 44-50
    • Braun, A.E.1
  • 9
    • 59949096077 scopus 로고    scopus 로고
    • Detailed characterization of hydrogen silsesquioxane for e-beam applications in a dynamic random access memory pilot line environment
    • K. Keil, K.-H. Choi, C. Hohle, J. Kretz, L. Szikszai, and J.-W. Bartha, "Detailed characterization of hydrogen silsesquioxane for e-beam applications in a dynamic random access memory pilot line environment", J. Vac. Sci. Technol. B 27, 47 (2009).
    • (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 47
    • Keil, K.1    Choi, K.-H.2    Hohle, C.3    Kretz, J.4    Szikszai, L.5    Bartha, J.-W.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.