Contactless measurements of resistivity of semiconductor wafers employing single-post and split-post dielectric-resonator techniques

IEEE Transactions on Instrumentation and Measurement

Volumn 56, Issue 5, 2007, Pages 1839-1844

  Krupka, Jerzy ^a   Mazierska, Janina ^b,c  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b MASSEY UNIVERSITY   (New Zealand)

^c JAMES COOK UNIVERSITY   (Australia)

Author keywords

Conductivity measurement; Contactless measurements; GaAs; Resistivity mapping; Semiconductor material measurements; SiC; Silicon

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; PERMITTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; SILICON WAFERS; TEMPERATURE;

CONTACTLESS ABSOLUTE RESISTIVITY MEASUREMENTS; SEMICONDUCTOR WAFERS;

DIELECTRIC RESONATORS;

EID: 34648833996     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIM.2007.903647     Document Type: Article

References (19)

1. G. L. Miller, D. A. H. Robinson, and J. D. Wiley, "Contactless measurement of semiconductor conductivity by radio-frequency-free-carrier power absorption," Rev. Sci. Instrum. vol. 47, no. 7, pp. 799-805, Jul. 1976.
2. J. G. Linhart, I. M. Templeton, and R. Dunsmuir, "A microwave resonant cavity method for measuring the resistivity of semiconducting materials," Br. J. Appl. Phys., vol. 7, no. 1, pp. 36-37, Jan. 1956.
3. K. S. Champlin and R. R. Krongard, "The measurement of conductivity and permittivity of semiconductor spheres by an extension of the cavity perturbation method," IEEE Trans. Microw. Theory Tech., vol. MTT-9, no. 6, pp. 545-551, Nov. 1961.
4. 01-mode reflectivity," J. Appl. Phys., vol. 38, no. 1, pp. 96-98, Jan. 1967.
5. K. S. Champlin and G. H. Glover, "Influence of waveguide contact on measured complex permittivity of semiconductors," J. Appl. Phys., vol. 37, no. 6, pp. 2355-2360, May 1966.
6. 01n mode cavities," IEEE Trans. Instrum. Meas., vol. IM-29, no. 1, pp. 67-70, Mar. 1980.
7. 01δ mode dielectric resonator for the complex permittivity measurements of semiconductors," in Proc. CPEM Conf., Jun. 1986, pp. 154-155.
8. J. Krupka, J. Breeze, N. M. N. Alford, A. E. Centeno, L. Jensen, and T. Claussen, "Measurements of permittivity and dielectric loss tangent of high resistivity float zone silicon at microwave frequencies," in Proc. Int. Microw. Conf., MIKON, 2006, to be published.
9. Silicon as an advanced window material for high power gyrotrons," Int. J. Infrared Millim. Waves, vol. 16, no. 5, pp. 863-877, May 1995.
10. R. Stibal, J. Windscheif, and W. Jantz, "Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement," Semicond. Sci. Technol., vol. 6, no. 10, pp. 955-1001, Oct. 1991.
11. M. N. Afsar and H. Chi, "Millimeter wave complex refractive index, complex dielectric permittivity and loss tangent of extra high purity and compensated silicon," Int. J. Infrared Millim. Waves, vol. 15, no. 7, pp. 1181-1188, Jul. 1994.
12. J. Krupka, R. G. Geyer, J. Baker-Jarvis, and J. Ceremuga, "Measurements of the complex permittivity of microwave circuit board substrates using split dielectric resonator and reentrant cavity techniques," in Proc. DMMA Conf., Bath, U.K., Sep. 23-26, 1996, pp. 21-24.
13. J. Krupka, A. P. Gregory, O. C. Rochard, R. N. Clarke, B. Riddle, and J. Baker-Jarvis, "Uncertainty of complex permittivity measurements by split-post dielectric resonator technique," J. Eur. Ceram. Soc., vol. 21, no.15,pp.2673-2676, 2001.
14. J. Krupka, S. A. Gabelich, K. Derzakowski, and B. M. Pierce, "Comparison of split-post dielectric resonator and ferrite disk resonator techniques for microwave permittivity measurements of polycrystalline yttrium iron garnet," Meas. Sci. Technol., vol. 10, no. 11, pp. 1004-1008, Nov. 1999.
15. 01n cylindrical cavity," J. Phys. E: Sci. histrum., vol. 12, no. 5, pp. 391-396, May 1979.
16. S. Maj and M. Pospieszalski, "A composite multilayered cylindrical dielectric resonator," in IEEE MIT-S Dig., San Francisco, CA, May 30-Jun. 1, 1984, pp. 190-192.
17. J. Krupka, "Frequency domain complex permittivity measurements at microwave frequencies," Meas. Sci. Technol., vol. 17, pp. R55-R77, 2006.
18. "Silicon for RF Communication Devices," Topsil Semiconductor Materials A/S.
19. J. Krupka, K. Derzakowski, M. E. Tobar, J. Hartnett, and R. G. Geyer, "Complex permittivity of some ultralow loss dielectric crystals at cryogenic temperatures," Meas. Sci. Technol., vol. 10, no. 5, pp. 387-392, Oct. 1999.