Non-monotonous behavior of In-doped GaN grown by MOVPE with nitrogen carrier gas

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 239-242

  Yamamoto, A ^a   Tanikawa, T ^a   Ikuta, K ^a   Adachi, M ^a   Hashimoto, A ^a   Ito, Y ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541105     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<239::AID-PSSB239>3.0.CO;2-F     Document Type: Article

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