Preparation of homogeneous VOX thin films by ion beam sputtering and annealing process

Vacuum

Volumn 75, Issue 1, 2004, Pages 85-90

  Wang, S B ^a   Zhou, S B ^a   Yi, X J ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Far infrared sensor; Ion beam sputtering; Temperature coefficient of resistance; Vanadium oxide thin film

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC RESISTANCE; INFRARED RADIATION; ION BEAMS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SENSORS; SILICON COMPOUNDS; SPUTTERING; SUBSTRATES; TEMPERATURE CONTROL; VANADIUM COMPOUNDS;

FAR INFRARED SENSOR; ION BEAM SPUTTERING; TEMPERATURE COEFFICIENT OF RESISTANCE; VANADIUM OXIDE THIN FILM;

THIN FILMS;

EID: 2642545751     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.068     Document Type: Article

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