High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC amplifiers

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Moon, J S ^a   Wong, D ^a   Antcliffe, M ^a   Hashimoto, P ^a   Hu, M ^a   Willadsen, P ^a   Micovic, M ^a   Moyer, H P ^a   Kurdoghlian, A ^a   MacDonald, P ^a   Wetzel, M ^a   Bowen, R ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BREAK DOWN VOLTAGES; CUT-OFF FREQUENCIES; GATE CAPACITANCE; RF DISPERSION; RF POWERING; X-BAND MMIC;

ELECTRIC CONDUCTIVITY; ELECTRON DEVICES; GALLIUM NITRIDE; IONIZATION OF GASES; MICROWAVE AMPLIFIERS; MICROWAVE CIRCUITS;

MOSFET DEVICES;

EID: 46049113729     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346801     Document Type: Conference Paper

References (8)

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5. F. Raay et al., IEEE Microwave and Wireless Letters, Vol. 15, 460 (2005);
6. S. T. Sheppard et al., DRC digest, (2000)
7. M. Micovic et al., IEDM Technical Digest, 807 (2004);
8. M. Micovic et al., MTT Tech Digest Vol .3 (2004)