Fabrication, characterization and numerical simulation of high breakdown voltage pHEMTs

Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Volumn , Issue , 2006, Pages 50-53

  Chini, A ^a   Lavanga, S ^b   Peroni, M ^b   Lanzieri, C ^b   Cetronio, A ^b   Teppati, V ^c   Camarchia, V ^c   Ghione, G ^c   Verzellesi, G ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b SELEX SISTEMI INTEGRATI   (Italy)

^c POLITECNICO DI TORINO   (Italy)

Author keywords

Charge carrier processes; Microwave power FETs; MODFETs; Semiconductor device breakdown; Simulation

Indexed keywords

CHARGE CARRIERS; CIRCUIT SIMULATION; ELECTRIC BREAKDOWN; MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE;

CURRENT DISPERSION; MICROWAVE POWER FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICE BREAKDOWN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41549120224     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2006.282747     Document Type: Conference Paper

References (4)

1. K. Asano, Y. Miyoshi, K. Ishikura, Y. Nashimoto, M. Kuzuhara and M. Mizuta, "Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage", International Electron Devices Meeting IEDM '98, pp. 59-62, December 1998.
2. Y.-K. Sung, J.-K. Kim. Y.-J. Ju and J.-H. Ryoo, "The Passivation of GaAs by laser CVD". Proceedings of 44th Electronic and Technology Conference 1994, pp. 635-639, 1-4 May 1994.
3. 1-xAs for x=0.1-0.4", Applied Physics Letters, Vol. 52, No. 4, pp. 296-298, 1988.
4. P. K. Bhattacharya, U. Das, F. Y. Juang, Y. Nashimoto and S. Dhar. "Material properties and optical guiding in InGaAsGaAs strained layer superlattices - a brief review", Solid-State Electronics, Vol. 29, No. 2, pp. 261-267, February 1986.