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Journal of Electronic Materials

Volumn 38, Issue 2, 2009, Pages 325-329

Nature of growth pits in lead salt epilayers grown by molecular beam epitaxy

(7) Ma, Jiangang a Li, Donghui a Bi, Gang a Zhao, Fanghai a Elizondo, Shelly b Mukherjee, Shaibal a Shi, Zhisheng a

a University of Oklahoma (United States)

b Nanolight Inc (United States)

Author keywords

EDXA; Lead selenide; Molecular beam epitaxy; SEM

Indexed keywords

CHEMICAL COMPOSITIONS; EDXA; EPILAYERS GROWN; FORMATION MECHANISMS; GROWTH PITS; LEAD SALTS; LEAD SELENIDE; MOLECULAR-BEAM EPITAXIES; POLYCRYSTAL LINES; RAY ANALYSES; SEM;

CRYSTAL GROWTH; EPILAYERS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; GROWTH (MATERIALS); MICROCRYSTALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WIRES; X RAY ANALYSIS;

CHEMICAL BEAM EPITAXY;

EID: 58349120170 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-008-0566-5 Document Type: Article

Times cited : (5)

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