Characterization of sub-50 nm line array structures with angle resolved multiple wavelength scatterometry

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6922, Issue , 2008, Pages

  Kotelyanskii, Michael ^a   Shen, Fei ^a   Jiang, Gary ^a   Bunday, Benjamin ^b  

^a RUDOLPH TECHNOLOGIES INC   (United States)

^b ISMI   (United States)

Author keywords

Accuracy; CD; Critical dimension; Focused beam ellipsometry; Metrology; OCD; Optical modeling; Scatterometry; TMU; Total measurement uncertainty

Indexed keywords

ACCURACY; CD; CRITICAL DIMENSION; FOCUSED BEAMS; OCD; OPTICAL MODELING; SCATTEROMETRY; TMU; TOTAL MEASUREMENT UNCERTAINTY; ANGLE OF INCIDENCE; DISCRETE LASERS; FORMATION PROCESS; HOLE ARRAYS; LAYER DEPOSITION; LINE ARRAYS; MULTIPLE WAVELENGTHS; OPTICAL METROLOGY; OPTICAL METROLOGY TECHNIQUES; PERIODIC LINES; POLY GATES; POLY-SI GATES; SINGLE ANGLES; SPECTROSCOPIC ELLIPSOMETERS; SUB-90NM TECHNOLOGIES; TOOL-TO-TOOL MATCHING; WAVELENGTH SPECTRA;

AMORPHOUS SILICON; ELLIPSOMETRY; LITHOGRAPHY; MEASUREMENTS; NANOTECHNOLOGY; UNCERTAINTY ANALYSIS; UNITS OF MEASUREMENT; POLYSILICON;

PROCESS CONTROL;

EID: 66649094027     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772580     Document Type: Conference Paper

References (9)

1. M. Sendelbach and C. Archie, "Scatterometry Measurement Precision and Accuracy Below 70 nm, " SPIE: Metrology, Inspection, and Process Control for Microlithography XVII, v5035, pp 224-238, 2003. [OCD-Eval-SPIE-2005] .
2. B. Bunday, A. Peterson, and J. Allgair. "Specifications, Methodologies and Results of Evaluation of Optical Critical Dimension Scatterometer Tools at the 90nm CMOS Technology Node and Beyond." Proceedings of SPIE Microlithography, v5752, pp 304-323, 2005. (Pubitemid 41275279)
3. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light, 2nd ed. (North-Holland, 1986).
4. International Technology Roadmap for Semiconductors, 2006 Update http://www.itrs.net/Links/2006Update/FinalToPost/14-Metrology2006Update.pdf.
5. Benjamin D. Bunday, Osman Sorkhabi, Youxian Wen, Ajit Paranjpe, Paul Terbeek, John Allgair, and Amy Peterson, Improvement in Total Measurement Uncertainty for Gate CD Control Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, edited by Angela Duparré, Bhanwar Singh, Zu-Han Gu, Proceedings of SPIE Vol. 5878 (SPIE, Bellingham, WA, 2005), Proc. of SPIE 58780M-1.
6. X.Niu, N.Jakatdar, S.Yedur, B.Singh, "Specular Spectroscopic Profilometry for the Sub-0.18mm PolySi-Gate Processes, " Proc.of SPIE, vol.3998, 2000.
7. Richard Silver, Thomas Germer, Ravikiran Attota, Bryan M. Barnes, Benjamin Bunday, John Allgair, Egon Marx and Jay Jun. "Fundamental Limits of Optical Critical Dimension Metrology:A Simulation Study, " Metrology, Inspection, and Process Control for Microlithography XXI, edited by Chas N. Archie, Proc. of SPIE Vol. 6518, 65180U, (2007).
8. T. Novikova, A. De Martino, S. Ben Hatit, and B. Drévillon, "Application of Mueller polarimetry in conical diffraction for critical dimension measurement in microelectronics, " Appl. Opt. 45, 3688-3697 (2006). (Pubitemid 44072948)
9. Benjamin Bunday, Amir Azordegan, Bill Banke, Chas Archie, Eric Solecky, John Allgair, Kye-Weon Kim, Richard Silver. "Unified Advanced Optical Critical Dimension (OCD) Scatterometry Specification for sub-65 nm Technology (2007 version)." ISMI TTID: 04114596D-ENG, Dec 2007. Non-confidential, available on SEMATECH website, http://www.sematech.org.