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Volumn 5752, Issue I, 2005, Pages 304-323

Specifications, methodologies and results of evaluation of optical critical dimension Scatterometer tools at the 90nm CMOS technology node and beyond

Author keywords

AMAG; CD Metrology; CD SEM; Integrated Metrology; ISMI; OCD; Optical Critical Dimension; Scatterometer; Scatterometry; SEMATECH; Unified Specification

Indexed keywords

AMAG; CD METROLOGY; CD-SEM; INTEGRATED METROLOGY; ISMI; OPTICAL CRITICAL DIMENSIONS (OCD); SCATTEROMETERS; SCATTEROMETRY; SEMATECH; UNIFIED SPECIFICATION;

EID: 24644437330     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.600115     Document Type: Conference Paper
Times cited : (22)

References (24)
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    • Bunday, B. and Bishop, M. 2002. Benchmarking of Advanced CD-SEMs at the 130 nm CMOS Technology Node. Proceedings of the SPIE 4689: pp. 102-115.
    • (2002) Proceedings of the SPIE , vol.4689 , pp. 102-115
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  • 7
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    • November, ISMI Confidential document Copy maybe obtained by Member Companies from Benjamin Bunday
    • Bunday, B. "Benchmarking of Advanced Critical Dimension Scanning Electron Microscopes (CD-SEMs) at the 90 nm CMOS Technology Node". November, 2003. ISMI Confidential document. ISMI Technology Transfer Document #03054398B-ENG. Copy maybe obtained by Member Companies from Benjamin Bunday.
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    • Quantitative profile-shape measurement study on a CD-SEM with application to Etch-Bias control and several different CMOS features
    • Bunday, B., Bishop, M., and Swyers, J. "Quantitative Profile-Shape Measurement Study on a CD-SEM with Application to Etch-Bias Control and Several Different CMOS Features." Proceedings of the SPIE 5038 (2003): pp. 383-395.
    • (2003) Proceedings of the SPIE , vol.5038 , pp. 383-395
    • Bunday, B.1    Bishop, M.2    Swyers, J.3
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  • 17
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    • Correlating scatterometry to critical dimension scanning electron microscopy (CD-SEM) and electrical gate measurements at the 90 nm node using total measurement uncertainty (TMU) analysis
    • M. Sendelbach, C. Archie, and W. Banke, "Correlating Scatterometry to Critical Dimension Scanning Electron Microscopy (CD-SEM) and Electrical Gate Measurements at the 90 nm Node Using Total Measurement Uncertainty (TMU) Analysis," SPIE: Metrology, Inspection, and Process Control for Microlithography XVIII, v5375, pp 550-563, 2004.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.