The role of morphology in stability of Si nanowires

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Migas, D B ^a   Borisenko, V E ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; EXPERIMENTAL OBSERVATION; ORIENTED SILICON; SI NANOWIRE; SINGLE CRYSTAL SILICON; TOTAL ENERGY;

DANGLING BONDS; ELECTRIC WIRE; MORPHOLOGY; NANOWIRES; SINGLE CRYSTALS;

SILICON WAFERS;

EID: 66549112544     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3131846     Document Type: Article

References (27)

1. W. Lu and C. M. Lieber, J. Phys. D: Appl. Phys. 0022-3727 39, R387 (2006). 10.1088/0022-3727/39/21/R01
2. V. Schmidt, S. Senz, and U. Gösele, Nano Lett. 1530-6984 5, 931 (2005). 10.1021/nl050462g
3. Y. Wu, Y. Cui, C. J. Barrelet, D. C. Bell, and C. M. Lieber, Nano Lett. 1530-6984 4, 433 (2004). 10.1021/nl035162i
4. X. Zhang, L. Zhang, G. Meng, G. Li, N. Jin-Phillipp, and F. Phillipp, Adv. Mater. (Weinheim, Ger.) 0935-9648 13, 1238 (2001). 10.1002/1521- 4095(200108)13:16<1238::AID-ADMA1238>3.0.CO;2-3
5. N. Ozaki, Y. Ohno, and S. Takeda, Appl. Phys. Lett. 0003-6951 73, 3700 (1998). 10.1063/1.122868
6. S. Sharma and M. K. Sunkara, Nanotechnology 0957-4484 15, 130 (2004). 10.1088/0957-4484/15/1/025
7. C. X. Wang, M. Hirano, and H. Hosono, Nano Lett. 1530-6984 6, 1552 (2006). 10.1021/nl060096g
8. F. Dhalluin, P. J. Desre, M. I. den Hertog, J. -L. Rouviere, P. Ferret, P. Gentile, and T. Baron, J. Appl. Phys. 0021-8979 102, 094906 (2007). 10.1063/1.2811935
9. S. Ismail-Beigi and T. Arias, Phys. Rev. B 0163-1829 57, 11923 (1998). 10.1103/PhysRevB.57.11923
10. R. Rurali and N. Lorente, Phys. Rev. Lett. 0031-9007 94, 026805 (2005). 10.1103/PhysRevLett.94.026805
11. I. Ponomareva, M. Menon, E. Richter, and A. N. Andriotis, Phys. Rev. B 0163-1829 74, 125311 (2006). 10.1103/PhysRevB.74.125311
12. R. Rurali, A. Poissier, and N. Lorente, Phys. Rev. B 0163-1829 74, 165324 (2006). 10.1103/PhysRevB.74.165324
13. T. Vo, A. J. Williamson, and G. Galli, Phys. Rev. B 0163-1829 74, 045116 (2006). 10.1103/PhysRevB.74.045116
14. G. Kresse and J. Hafner, Phys. Rev. B 0163-1829 49, 14251 (1994). 10.1103/PhysRevB.49.14251
15. G. Kresse and J. Furthmüller, Comput. Mater. Sci. 0927-0256 6, 15 (1996). 10.1016/0927-0256(96)00008-0
16. G. Kresse and J. Furthmüller, Phys. Rev. B 0163-1829 54, 11169 (1996). 10.1103/PhysRevB.54.11169
17. J. Perdew and Y. Wang, Phys. Rev. B 0163-1829 45, 13244 (1992). 10.1103/PhysRevB.45.13244
18. A. A. Stekolnikov, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 0163-1829 65, 115318 (2002). 10.1103/PhysRevB.65.115318
19. A. A. Stekolnikov, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 0163-1829 67, 195332 (2003). 10.1103/PhysRevB.67.195332
20. D. B. Migas, S. Cereda, F. Montalenti, and L. Miglio, Surf. Sci. 0039-6028 556, 121 (2004). 10.1016/j.susc.2004.03.023
21. G. H. Lu, M. Huang, M. Cuma, and F. Liu, Surf. Sci. 0039-6028 588, 61 (2005).
22. D. B. Migas, J. Appl. Phys. 0021-8979 98, 054310 (2005). 10.1063/1.2039275
23. T. Thonhauser and G. D. Mahan, Phys. Rev. B 0163-1829 69, 075213 (2004). 10.1103/PhysRevB.69.075213
24. D. B. Migas and V. E. Borisenko, Nanotechnology 0957-4484 18, 375703 (2007). 10.1088/0957-4484/18/37/375703
25. A. K. Singh, V. Kumar, R. Note, and Y. Kawazoe, Nano Lett. 1530-6984 6, 920 (2006). 10.1021/nl052505z
26. T. Angot and P. Louis, Phys. Rev. B 0163-1829 60, 5938 (1999). 10.1103/PhysRevB.60.5938
27. T. Hanrath and B. A. Korgel, Small 1613-6810 1, 717 (2005). 10.1002/smll.200500033