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Volumn 673, Issue , 2001, Pages
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TEM study of strain states in III-V semiconductor epitaxial layers
a
a
CEMES CNRS
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL LATTICES;
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
ELASTICITY;
EPITAXIAL GROWTH;
LATTICE CONSTANTS;
MOIRE FRINGES;
SEMICONDUCTING GALLIUM COMPOUNDS;
STRESS RELAXATION;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
BRAGG REFLECTIONS;
LATTICE MISMATCH;
LOMER DISLOCATIONS;
SEMICONDUCTOR EPITAXIAL LAYERS;
STRAIN STATES;
STRAIN MEASUREMENT;
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EID: 0035557870
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-673-p5.5 Document Type: Conference Paper |
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Times cited : (1)
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References (8)
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