Probing bulk and surface damage in widegap semiconductors

Journal of Physics D: Applied Physics

Volumn 34, Issue 18, 2001, Pages 2748-2753

  Cunningham, W ^a   Gouldwell, A ^a   Lamb, G ^a   Roy, P ^a   Scott, J ^a   Mathieson, K ^a   Bates, R ^a   Smith, K M ^a   Cusco, R ^b   Watson, I M ^c   Glaser, M ^d   Rahman, M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^c UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^d CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

IRRADIATION; PLASMA ETCHING; PLASMA PROBES; PROTON BEAMS; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING;

WIDEGAP SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 6644222867     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/18/306     Document Type: Article

References (17)