Linear stability and instability patterns in ion-sputtered silicon

Journal of Physics Condensed Matter

Volumn 21, Issue 22, 2009, Pages

  Madi, Charbel S ^a   Bola George, H ^a   Aziz, Michael J ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SURFACES; AMPLIFICATION RATE; CONTROL PARAMETERS; EXPERIMENTAL SYSTEM; FLAT SURFACES; FORMING REGION; IN-CONTROL; INCIDENCE ANGLES; ION ENERGIES; LINEAR STABILITY; NON-EQUILIBRIUM PATTERN; PARALLEL MODE; PATTERN FORMATION; POWER LAW; ROOM TEMPERATURE; SI SURFACES; SPUTTER RIPPLING; SURFACE CONTAMINATIONS; TIME DEPENDENCE; TYPE II;

BIFURCATION (MATHEMATICS); CONTROL SYSTEM ANALYSIS; IONS; SYSTEM STABILITY;

AMPLIFICATION;

EID: 66249137823     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/22/224010     Document Type: Article

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