High index nanocomposite photoresist for 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Bae, Woo Jin ^a   Trikeriotis, Markos ^a   Rodriguez, Robert ^a   Zettel, Michael F ^a   Piscani, Emil ^b   Ober, Christopher K ^a   Giannelis, Emmanuel P ^a   Zimmerman, Paul ^b  

^a Department of Obstetrics Gynecology   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

193 nm lithography; Hafnia (HfO 2) nanoparticle; High refractive index; Immersion lithography; Photoresist

Indexed keywords

193 NM LITHOGRAPHY; 193 NM RESIST; 32-NM NODE; 45NM NODE; CRITICAL ISSUES; DEPTH OF FOCUS; FEATURE SIZES; HAFNIA (HFO 2) NANOPARTICLE; HIGH INDEX; HIGH INDEX FLUID; HIGH REFRACTIVE INDEX; HIGH REFRACTIVE INDEX FLUID; HIGHER INDEX; IMMERSION LITHOGRAPHY; LIGAND EXCHANGE METHOD; NUMERICAL APERTURE; OPTICAL ABSORPTION; RESIST MATERIALS; RESIST MATRIX; SOL-GEL METHODS; ULTRAVIOLET ABSORBANCE;

FLUIDS; GELATION; HAFNIUM COMPOUNDS; LIGHT REFRACTION; NANOPARTICLES; NANOTECHNOLOGY; OPTOELECTRONIC DEVICES; PHOTORESISTORS; PHOTORESISTS; REFRACTIVE INDEX; REFRACTOMETERS; SOL-GEL PROCESS; SURFACE TREATMENT;

LITHOGRAPHY;

EID: 66049111966     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814154     Document Type: Conference Paper

References (8)

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8. The composition of TARF-P6111ME is not disclosed because of the nondisclosure agreement between TOK and Cornell.