ESD-protected 24 GHz LNA for radar applications in SiGe:C technology

2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers

Volumn , Issue , 2009, Pages 49-52

  Issakov, Vadim ^a   Knapp, Herbert ^b   Wojnowski, Maciej ^b   Thiede, Andreas ^a   Simbürger, Werner ^b   Haider, Günter ^c   Maurer, Linus ^c  

^a UNIVERSITY OF PADERBORN   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c DICE GmbH & Co KG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE APPLICATIONS; CASCODE; CENTER FREQUENCY; CHIP SIZES; COMPRESSION POINTS; FAILURE CURRENTS; HIGH LINEARITY; HIGH ROBUSTNESS; INFINEON; KEY PARAMETERS; PERFORMANCE VARIATIONS; RADAR APPLICATIONS; SIGE TECHNOLOGY; SINGLE STAGE; TRANSMISSION LINE PULSE;

AUDIO FREQUENCY AMPLIFIERS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; LOW NOISE AMPLIFIERS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 65949105712     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2009.4770497     Document Type: Conference Paper

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