Properties of the novel de-protecting unit for next generation ArF resist polymer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Shibuya, Akinori ^a   Yamaguchi, Shuhei ^a   Yoshida, Yuko ^a   Shirakawa, Michihiro ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

Acid diffusion; ArF resist polymer; Chemically amplified resist; Exposure latitude

Indexed keywords

32-NM NODE; ACID DIFFUSION; ARF RESIST POLYMER; ARF RESISTS; CHEMICALLY AMPLIFIED RESIST; EXPOSURE LATITUDE; LITHOGRAPHY SYSTEMS; METHACRYLATE MONOMERS; MODEL REACTIONS; MONOMER UNITS; POSTEXPOSURE BAKE; PROTECTING UNITS; TRAPPING ABILITY;

ACIDS; DIFFUSION; ESTERIFICATION; ESTERS; MONOMERS; OXIDE SUPERCONDUCTORS; PHOTORESISTORS; POLYMERS;

PHOTORESISTS;

EID: 65849287318     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814096     Document Type: Conference Paper

References (6)

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