Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1893-1898

  Wan, A ^a   Menon, V ^a   Forrest, S R ^a   Wasserman, D ^a   Lyon, S A ^a   Kahn, A ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE DOMAIN (APD); BUFFER LAYERS; ELECTRON CHANNELING; VICINAL SUBSTRATES;

CRYSTALLINE MATERIALS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; THIN FILMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4944257454     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1774203     Document Type: Article

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